Substrate processing device, substrate processing method, and developing device

ABSTRACT

Rinsing nozzles  310   a  to  310   e  are moved on a wafer W while they are discharging rinsing solution  326 . At that point, discharging openings  317   a  to  317   e  are contacted to developing solution  350  coated on the wafer W or rinsing solution  326  on the wafer W. Thus, the impact against the wafer W can be suppressed. As a result, pattern collapse can be prevented. In addition, a front portion of the developing solution  350  can push away the developing solution  350.

TECHNICAL FIELD

The present invention relates to a substrate processing apparatus and asubstrate processing method for performing a developing process for asemiconductor substrate at a photolithography step for producing asemiconductor device and to a developing apparatus for performing adeveloping process using developing solution for a substrate on whichresist has been coated and a developing process has been performed.

BACKGROUND OF THE INVENTION

At a photolithography step upon production of a semiconductor device,photoresist is coated on the front surface of a semiconductor wafer(hereinafter referred to as “wafer”). Thereafter, a mask pattern isexposed on the resist and developed. As a result, a resist pattern isformed on the front surface of the wafer.

At such a photolithography step, the developing process is performed byfor example a paddle method or a dip method. In the paddle method,developing solution is supplied to a wafer. On the other hand, in thedip method, a wafer is dipped in developing solution. In the state, thedeveloping process is promoted. Thereafter, rinsing solution such aspure water as washing solution is supplied onto the wafer so as to washaway the developing solution. Finally, a drying process for blowing airto the wafer or rotating the wafer is performed so as to remove therinsing solution from the wafer.

When the resist is for example negative type, a light-exposed portion ishardened. Thus, a non-hardened portion, namely a dissolvable portion ofthe resist, is dissolved with the developing solution. In contrast, whenthe resist is for example positive type, the light-exposed portion isdissolved with the developing solution.

Next, how for example negative type resist is developed will bedescribed. As shown in FIG. 34, developing solution is applied ontoresist 210 coated on the front surface of for example a wafer W forwhich an exposing process has been performed. Thereafter, the wafer W iskept for a predetermined time period. A dissolvable portion 211dissolves in the developing solution. Thereafter, washing solution issupplied onto the front surface of the wafer W so as to wash away thedeveloping solution from the wafer W. Thereafter, the wafer W is dried.As a result, a resist pattern 212 is obtained.

As shown in FIG. 35( a), the wafer for which the exposing process hasbeen performed is held in a nearly horizontal position. Thereafter, thewafer W is placed on a spin chuck 213 that is rotatable around thevertical axis. In this state, the developing process is performed. Firstof all, developing solution D is coated on the entire front surface ofthe wafer W. Thereafter, the wafer W is stationary-developed for apredetermined time period, for example 60 seconds, so as to promote thedeveloping reaction. After the predetermined time period has elapsed, asshown in FIG. 35( b), washing solution R such as pure water is suppliedfrom a washing solution nozzle 214 that faces for example a centerportion of the front surface of the wafer. In addition, the wafer W isrotated at a peripheral velocity of around 1000 rpm. With an action ofcentrifugal force, the developing solution D that contains a resistdissolvable component is washed away. Finally, as shown in FIG. 35( c),the wafer W is rotated at high speed so as to dry it.

However, since the size of the wafer W is becoming large in recentyears, in the conventional method of which the wafer W is rotated andwith an action of centrifugal force the developing solution D is washedaway from the wafer W, the difference between the centrifugal force thatacts at a periphery portion of the wafer W and the centrifugal forcethat acts at a center portion of the wafer W is large. Thus, the centerportion at which the centrifugal force is weak may be insufficientlywashed. In other words, the dissolvable component of the resist at avalley portion of the resist pattern has a high concentration andcontains deposit of a resist component that has been dissolved,undissolved resist particles, and so forth. In other words, thedissolvable component may be in so-called muddy state. When thecentrifugal force is low, frictional force of the deposit against forexample the front surface of the wafer W and the wall surface of theresist pattern more strongly acts than the centrifugal force. As aresult, even if the wafer W is rotated, the deposit may not be shakenoff, but left. If the wafer W is dried with the deposit that adheres onthe front surface of the pattern (the front surface of the resist or thefront surface of the base material), there is a possibility of which adevelopment defect takes place.

On the other hand, a method for strengthening the centrifugal force atthe center portion of the wafer W with an increased number of rotationsthereof has been studies. However, in this method, since the centrifugalforce at the periphery portion of the wafer W is too strong, there is apossibility of which a resist pattern thereon peels off or collapses.

Moreover, in recent years, semiconductor devices are further becomingminiaturized. A resist pattern that is finely structured and that has ahigh aspect ratio has come out. Since a resist pattern is finelystructure and has a high aspect ratio, when rinsing solution passesthrough patterns, surface tension of the rinsing solution causes pullingforce to take place between the patterns. So-called a problem of“pattern collapse” takes place. As countermeasures against such aproblem, a method of which the surface tension of rinsing solution isweakened with surfactant mixed with the rinsing solution is known. Themethod requires that the rinsing solution should be equally suppliedonto the substrate. However, there is a problem of which the rinsingsolution is not equally replaced with the developing solution.

If surfactant contains impurities such as particles, when the rinsingsolution that contains the surfactant is supplied onto the substrate,there is a possibility of which a product defect takes place.

DISCLOSURE OF THE INVENTION

The present invention was made under such a situation. An object of thepresent invention is to provide a technology that allows a developmentdefect to decrease and developing solution to be washed away in a shorttime.

Another object of the present invention is to provide a substrateprocessing apparatus and a substrate processing method that allowrinsing solution to be equally supplied onto a substrate so as to washaway processing solution such as developing solution.

Another object of the present invention is to provide a substrateprocessing apparatus and a substrate processing method that allow forexample dissolvable substance of resist contained in processing solutionor impurities contained in rinsing solution to be prevented fromadhering to a substrate.

To accomplish the foregoing object, a first aspect of a substrateprocessing apparatus according to the present invention comprises anelongated washing nozzle, having a discharging opening, for dischargingwashing solution onto the front surface of a substrate on whichprocessing solution has been coated; and distance keeping means forkeeping the distance between the discharging opening and the frontsurface of the substrate constant so as to contact the dischargingopening to the processing solution when the washing solution isdischarged from the washing nozzle.

According to the present invention, the washing nozzle is formed in anelongated shape. In this case, a plurality of for example nearlycircular discharging openings are disposed in a longitudinal directionof the washing nozzle. Alternatively, an elongated discharging openingis disposed in the longitudinal direction of the washing nozzle.Alternatively, a nearly circular discharging opening and an elongateddischarging opening may be disposed in one washing nozzle. These applyto the following description. According to the present invention, whenthe washing nozzle discharges washing solution onto the substrate onwhich processing solution has been supplied, the washing solution can beequally spread onto the substrate. As a result, the pattern collapse canbe prevented. In addition, since the washing nozzle can dischargewashing solution in a wide area at a time, the washing time period canbe shortened. The processing solution is for example developingsolution. However, the processing solution conceptually includes forexample pure water that is supplied onto the substrate on which thedeveloping solution has been supplied. In this case, after thedeveloping solution is replaced with the pure water, the washingsolution of the present invention can be supplied onto the substrate soas to equally replace the pure water with the washing solution. Inaddition, according to the present invention, while the dischargingopening of the washing nozzle is in contact with the processingsolution, the washing solution can be supplied. Since the dischargingopening is in contact with the processing solution, the washing solutiondischarged from the discharging opening is continuously unified with theprocessing solution. The washing solution that flows spreads in theentire processing solution. As a result, the impact of the washingsolution against the substrate can be suppressed. Thus, since the impactagainst the substrate can be suppressed, the pattern collapse can beprevented. According to the present invention, “washing” conceptuallyincludes rinse. Thus, “washing solution” conceptually includes rinsingsolution. They apply to the following description.

According to an aspect of the present invention, the distance keepingmeans is configured to keep the distance between the discharging openingand the front surface of the substrate at 0.4 mm or less.

Such a structure securely causes the discharging opening to be incontact with the processing solution.

An aspect of the present invention further comprises moving means formoving the washing nozzle nearly in parallel with the front surface ofthe substrate and nearly perpendicular to the elongated washing nozzlewhile the washing nozzle is discharging the washing solution.

With such a structure, when the discharging nozzle discharges thewashing solution while it is being moved, a convection current takesplace on the substrate. Thus, the washing solution can be spread. Sincethe washing solution is spread, impurities can be removed. However, theconvection current may circulate the processing solution or impuritieson the substrate. As a result, the impurities may not be washed away.When the discharging opening is in contact with the processing solution,the impurities that circulate can be pushed away. As a result, theimpurities can be removed from the substrate. Thus, the substrate can beeffectively washed.

According to an aspect of the present invention, a plurality of washingnozzles are disposed. The plurality of washing nozzles are disposed atnearly constant intervals in the direction of which the washing muzzlesare moved by the moving means.

When the washing nozzle discharges the washing solution while thewashing nozzle is being moved, a convection current takes place on thesubstrate. As a result, the washing solution can be spread. Since thewashing solution is spread, impurities can be removed. When a pluralityof washing nozzles discharge washing solution, an convection currentthat takes place with washing solution that one washing nozzledischarges may cancel a convection current that takes place with washingsolution that the adjacent washing nozzle discharges. According to thepresent invention, since washing nozzles are disposed at nearly constantintervals in the direction of which they are moved, convection currentsof washing solution can be prevented from being cancelled. Thus, theimpurities can be effectively removed.

An aspect of the present invention further comprises flow amountadjusting means for adjusting the flow amounts of the washing solutionsdischarged from the washing nozzles.

With such a structure, the flow amount of washing solution can beadjusted for each washing nozzle. Thus, the substrate can be effectivelywashed.

According to an aspect of the present invention, the flow amounts of thewashing solution discharged from the plurality of washing nozzles aregradually increased in the order from the forward washing nozzle to thebackward washing nozzle in the direction of which the washing nozzlesare moved.

When the flow amount of washing solution discharged from a dischargenozzle is large, the washing effect becomes large. On the other hand,when the processing solution is developing solution, it is alkalinesolution whose pH value is normally around 12. Thus, if pure water whosepH value as washing solution is around 7 is suddenly discharged intosuch developing solution, a pH shock will take place. The pH shock is aphenomenon of which when two types of solutions whose pH values arelargely different, for example developing solution and pure water, aremixed, impurities re-adhere to the substrate. With the structureaccording to the present invention, the flow amounts can be graduallyincreased in the order from the forward washing nozzle to the backwardwashing nozzle in the moving direction thereof. Thus, the high pH valueof the processing solution can be gradually decreased. As a result,since the pH value is not suddenly varied, the pH shock can besuppressed. Consequently, the substrate can be effectively washed.

According to an aspect of the present invention, pH values of thewashing solutions discharged from the plurality of washing nozzles aregradually decreased in the order from the forward washing nozzle to thebackward washing nozzle in the direction of which the washing nozzlesare moved.

With such a structure, since the pH values of the washing solutions aregradually decreased in the order from the forward washing nozzle to thebackward washing nozzle in the moving direction thereof, the pH valuesof the processing solution can be gradually decreased. When theprocessing solution is developing solution, if the pH value of thedeveloping solution that is normally used is alkaline solution whose pHvalue is around 12, the pH value is not suddenly varied. Thus, the pHshock can be suppressed. As a result, the substrate can be effectivelywashed.

According to an aspect of the present invention, the length of thewashing nozzle is nearly the same as the diameter of the substrate.

With such a structure, the amount of the washing solution that is usedcan be decreased. In addition, the size of the washing nozzle can bedecreased. Thus, the cost of the apparatus can be reduced.

An aspect of the present invention further comprises a sucking nozzlefor sucking the washing solution that has been discharged by the washingnozzle and that resides on the substrate.

As described above, impurities may drift in washing solution that hasbeen discharged from the washing nozzle and that resides on thesubstrate. After time elapses, the impurities will deposit and reside onthe front surface of the wafer. According to the present invention,since the impurities can be sucked along with the washing solution, theimpurities can be prevented from residing on the front surface of thesubstrate. Thus, the substrate can be effectively washed.

According to an aspect of the present invention, a plurality of washingnozzles are disposed. The washing nozzles and the sucking nozzle arealternately disposed in the direction of which the washing nozzles andthe sucking nozzle are moved.

With such a structure, processing solution, washing solution, impuritiesthat deposit on the front surface of the substrate, impurities that aredispersed by impact of discharged washing solution, and so forth can beimmediately sucked. In addition, when the washing solution is sucked,the substrate can be easily dried. Moreover, when the washing nozzlesand sucking nozzles are alternately disposed, the distance between twowashing nozzles can be kept. Thus, the processes can be effectivelyperformed.

According to an aspect of the present invention, a plurality of washingnozzles are disposed. The plurality of washing nozzles are disposed inthe direction of which the washing nozzles are moved. The sucking nozzleis preceded by the washing nozzles in the direction of which the suckingnozzle and the washing nozzles are moved.

In such a manner, a plurality of washing nozzles and a plurality ofsucking nozzles can be disposed as respective blocks.

According to an aspect of the present invention, the washing solutioncontains non-ionic surfactant that weakens surface tension of thewashing solution.

With such a structure, since washing solution containing non-ionicsurfactant is discharged, the surface tension of the washing solutioncan be suppressed. Thus, the pattern collapse can be prevented.

A second aspect of a substrate processing apparatus according to thepresent invention comprises means for supplying processing solution ontoa substrate; and an elongated nozzle for discharging rinsing solutioncontaining first processing agent that weakens surface tension of therinsing solution onto the substrate on which the processing solution hasbeen supplied.

According to the present invention, since the elongated nozzledischarges the rinsing solution whose surface tension is weakened ontothe substrate on which the processing solution has been supplied, therinsing solution can be equally spread onto the substrate. As a result,the pattern collapse can be prevented. The processing solution is forexample developing solution. However, the processing solutionconceptually includes for example pure water that is supplied onto thesubstrate on which the developing solution has been supplied. In thiscase, after the developing solution is replaced with the pure water, therinsing solution of the present invention can be supplied onto thesubstrate so as to equally replace the pure water with the washingsolution. In addition, as the first processing agent, non-ionicsurfactant can be used.

According to an embodiment of the present invention, the rinsingsolution contains second processing agent that disperses impurities thatreside in the processing solution and the rinsing solution.Conventionally, when rinsing solution that contains impurities issupplied onto a substrate, there is a high possibility of which theimpurities gather and adhere to a resist pattern. However, according tothe present invention, since the second processing agent disperses theimpurities, the rinsing solution flows from the substrate along withimpurities. Thus, such a problem does not take place. In this example,as the second processing agent, negative-ionic surfactant can be used.

An aspect of the present invention further comprises a mechanism formoving the nozzle at least horizontally on the substrate in a directionperpendicular to the longitudinal direction of the nozzle. The rinsingsolution is discharged while the nozzle is being moved by the movingmechanism. Thus, while the processing solution is gradually replacedwith the rinsing solution, it can be equally supplied onto the entiresurface of the substrate. When the length of the nozzle is nearly thesame as the diameter of the substrate or larger than the diameter of thesubstrate, the rinsing solution can be more equally supplied. It ispreferred that a discharging amount of the rinsing solution should be inthe range from 40 ml to 500 ml per substrate. If the discharging amountof the rinsing solution exceeds 500 ml, the flow rate thereof mayincrease. As a result, the pattern collapse tends to take place. Incontrast, if the discharging amount of the rinsing solution is smallerthan 40 ml, there is a possibility of which the rinsing solution is notequally supplied onto the entire surface of the substrate. Thedischarging amount of the rinsing solution is more preferably in therange from 100 ml to 200 ml.

According to an aspect of the present invention, the nozzle isconfigured to discharge the rinsing solution while the nozzle is incontact with the processing solution. Thus, the impact of the rinsingsolution against the substrate can be suppressed in comparison with thecase that the nozzle discharges the rinsing solution while the nozzle isnot in contact with the processing solution on the substrate. As aresult, the pattern collapse can be effectively prevented. In addition,the nozzle is moved on the substrate while the nozzle is in contact withthe processing solution. Thus, while the nozzle is pushing out theprocessing solution to some extent, the nozzle can replace theprocessing solution with the rinsing solution. Thus, the processingsolution can be effectively replaced with the rinsing solution.

In addition, since the nozzle has such a height, while the nozzle isdischarging rinsing solution, it is continuously unified with rinsingsolution that has been discharged. Thus, the impact of the developingsolution against the substrate does not almost take place.

According to an aspect of the present invention, the nozzle has aright-angle portion that is formed on the forward side in the directionof which the nozzle is moved and that upwardly extends from a lower endportion that is in contact with the processing solution on thesubstrate; and a curved portion that is formed on the opposite side inthe direction of which the nozzle is moved and that upwardly extendsfrom the lower end portion. According to the present invention, when thenozzle is moved while it is in contact with the processing solution, theright-angle portion formed on the forward side in the moving directionof the nozzle causes the processing solution to be pushed away andremoved. In addition, the curved portion on the opposite side in themoving direction of the nozzle causes the rinsing solution that has beendischarged to be smoothened.

According to an aspect of the present invention, the nozzle has meansfor discharging the rinsing solution with an angle to the direction ofwhich the nozzle is moved. Thus, since the processing solution on thesubstrate is pushed away in the moving direction of the nozzle andremoved, the processing solution can be effectively replaced with therinsing solution.

An aspect of the present invention further comprises a mechanism forrotating the nozzle on a plane in parallel with the front surface of thesubstrate. The rinsing solution is discharged while the nozzle is beingrotated by the rotating mechanism. For example, if the length of thenozzle is nearly the same as the diameter of the substrate, when thenozzle is rotated by 180° or more, the rinsing solution can be equallysupplied onto the entire surface of the substrate.

According to an aspect of the present invention, the nozzle isconfigured so that the discharging direction of the rinsing solutionfrom the center portion of the nozzle to one end portion thereof and thedischarging direction of the rinsing solution from the center portion ofthe nozzle to the other end portion thereof have an angle to thedirection of which the nozzle is rotated. Thus, when the nozzledischarges the rinsing solution while the nozzle is being rotated aroundthe center portion thereof, since the rinsing solution can be dischargedin the direction of which the nozzle is rotated, the processing solutionon the substrate is pushed away in the moving direction of the nozzleand the processing solution is removed. As a result, the processingsolution can be effectively replaced with the rinsing solution.

According to an aspect of the present invention, the nozzle has meansfor discharging the rinsing solution so that the discharging angle ofthe rinsing solution to the substrate is gradually increased in thedirection from the center portion of the nozzle to the end portionthereof. Thus, the processing solution can be spread from the centerportion of the substrate to the periphery portion thereof and removed.Consequently, the rinsing solution can be equally supplied. When therinsing solution is discharged so that the discharging amount isgradually decreased from the center portion of the nozzle to the endportion thereof, the rinsing solution flows from the center portion ofthe substrate to the periphery portion thereof. Thus, the processingsolution can be effectively removed. The rinsing solution can be equallysupplied onto the entire surface of the substrate.

A third aspect of a substrate processing apparatus according to thepresent invention comprises a rotatably holding portion for rotatablyholding a substrate; means for supplying processing solution onto thesubstrate held by the rotatably holding portion; and an elongated nozzlefor discharging rinsing solution that contains a first processing agentthat weakens surface tension of the rinsing solution onto the substrateon which processing solution has been supplied and that is being rotatedby the rotatably holding portion.

According to the present invention, since the elongated nozzledischarges the rinsing solution whose surface tension is weakened ontothe substrate on which the processing solution has been supplied, therinsing solution can be equally spread onto the substrate. As a result,the pattern collapse can be prevented. In particular, since theelongated nozzle discharges the rinsing solution while the elongatednozzle is being rotated, the rinsing solution can be equally dischargedonto the entire surface of the substrate. The elongated nozzle has forexample a plurality of nearly circular discharging openings or anelongated discharging opening in the longitudinal direction of thewashing nozzle. It is preferred that the length of the nozzle should benearly the same as the diameter of the substrate or smaller than thediameter of the substrate. If the length of the nozzle is nearly thesame as the diameter of the substrate, when the substrate is rotated by180° or more, the washing solution can be supplied onto the entiresurface of the substrate. If the length of the nozzle is nearly the sameas the radius of the substrate, when the substrate is rotated by oneturn or more, the rinsing solution can be supplied onto the entiresurface of the substrate.

According to an aspect of the present invention, when the number ofrotations of the substrate is 500 rpm or less, the pattern collapse canbe prevented. The number of rotations is more preferably 100 rpm orless.

When the length of the nozzle is nearly the same as the diameter of thesubstrate, the discharging direction of the rinsing solution from thecenter portion of the nozzle to one end portion thereof and thedischarging direction of the rinsing solution from the center portion ofthe nozzle to the other end portion thereof have an angle to a relativedirection of which the nozzle is rotated against the substrate. Thus,since the rinsing solution can be discharged in the direction of whichthe nozzle is rotated, an operation of which the processing solution onthe substrate can be pushed away in the moving direction of the nozzleand removed works. Thus, the processing solution can be effectivelyreplaced with the rinsing solution.

According to an aspect of the present invention, the nozzle has meansfor discharging the rinsing solution so that the discharging angle ofthe rinsing solution to the substrate is gradually increased in thedirection from the center portion of the nozzle to the end portionthereof when the length of the nozzle is nearly the same as the diameterof the substrate. Thus, since the processing solution can be removed insuch a manner that the processing solution flows from the center portionof the substrate to the periphery portion thereof, the rinsing solutioncan be equally supplied.

A first aspect of a substrate processing method according to the presentinvention comprises the steps of supplying processing solution onto asubstrate; and while an elongated nozzle having a discharging opening isbeing moved on the substrate on which the processing solution has beensupplied so that the discharging opening is in contact with theprocessing solution, discharging rinsing solution containing a firstprocessing agent that weakens surface tension of the rinsing solutionthrough the discharging opening.

According to the present invention, since the elongated nozzledischarges rinsing solution whose surface tension is weakened onto thesubstrate on which the processing solution has been supplied, therinsing solution can be equally spread onto the substrate. As a result,the pattern collapse can be prevented. In addition, according to thepresent invention, the nozzle can discharge the rinsing solution whilethe discharging opening is in contact with the processing solution.Since the discharging opening is in contact with the processingsolution, the washing solution discharged from the discharging openingis continuously unified with the processing solution. The rinsingsolution that flows spreads in the entire processing solution. As aresult, the impact of the washing solution against the substrate can besuppressed. Thus, since the impact against the substrate can besuppressed, the pattern collapse can be prevented.

A second aspect of a substrate processing method according to thepresent invention comprises the steps of supplying processing solutiononto a substrate; and while the substrate on which the processingsolution has been supplied is being rotated, discharging rinsingsolution containing first processing agent that weakens surface tensionof the rinsing solution onto the substrate through a discharging openingof an elongated nozzle in the state that the discharging opening is incontact with the processing solution.

According to the present invention, since the stationary elongatednozzle discharges the rinsing solution while the substrate is beingrotated, the rinsing solution can be equally discharged onto the entiresurface of the substrate. In addition, according to the presentinvention, the nozzle can discharge the rinsing solution while thedischarging opening is in contact with the processing solution. Sincethe discharging opening is in contact with the processing solution, thewashing solution discharged from the discharging opening is continuouslyunified with the processing solution. The rinsing solution that flowsspreads in the entire processing solution. As a result, the impact ofthe washing solution against the substrate can be suppressed. Thus,since the impact against the substrate can be suppressed, the patterncollapse can be prevented.

A first aspect of a developing apparatus according to the presentinvention is a developing apparatus for developing a substrate on whichresist has been coated and an exposing process has been performed,comprising a substrate holding portion for horizontally holding thesubstrate; a developing solution supplying nozzle for supplyingdeveloping solution onto the front surface of the substrate held by thesubstrate holding portion; a washing solution supplying nozzle, having adischarging opening formed with a length equal to or larger than thewidth of an effective area of the substrate, for supplying washingsolution onto the front surface of the substrate on which the developingsolution has been coated; and a moving mechanism for moving the washingsolution supplying nozzle from one end side of the substrate to theother end side in such a manner that a lower end portion of thedischarging opening is lower than the surface of the developing solutionand the separation distance between the lower end portion of thedischarging opening and the front surface of the substrate is 0.4 mm orless.

With the developing apparatus according to the present invention,lateral pushing force that takes place due to collision of the washingsolution discharged form the discharging opening of the washing solutionsupplying nozzle and pushing force of the washing solution supplyingnozzle against the side wall surface are combined to drain developingsolution containing a resist component on the front surface of thesubstrate. Thus, since the developing solution and the resist componentcan be prevented from residing on the front surface of the substrate, apattern whose development defects are small can be obtained.

A second aspect of a developing apparatus according to the presentinvention is a developing apparatus for developing a substrate on whichresist has been coated and an exposing process has been performed,comprising a substrate holding portion for horizontally holding thesubstrate; a developing solution supplying nozzle for supplyingdeveloping solution onto the front surface of the substrate held by thesubstrate holding portion; a washing solution supplying nozzle, having adischarging opening formed with a length equal to or larger than thewidth of an effective area of the substrate, for supplying washingsolution onto the front surface of the substrate on which the developingsolution has been coated; a gas blowing opening disposed on a sideportion in the direction of which the washing solution supplying nozzleis moved and is inclined on the forward side; and a moving mechanism formoving the washing solution supplying nozzle from one end side of thesubstrate to the other end side in such a manner that a lower endportion of the discharging opening is lower than the surface of thedeveloping solution.

The washing solution supplying nozzle may have a plurality ofdischarging openings disposed in the direction of which the washingsolution supplying nozzle is moved. A flow amount adjusting portion maybe disposed at each of the discharging openings. In addition, after thesubstrate on which the developing solution has been coated is rotatedfor a predetermined time period, the washing solution may be-supplied.Moreover, after the substrate is washed by moving the washing solutionsupplying nozzle from one end side of the substrate to the other endside thereof while the washing solution is being discharged from thedischarging opening thereof, the substrate may be washed by rotating thesubstrate while the washing solution is being supplied to a centerportion of the substrate.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a plan view showing a coating/developing processing apparatusaccording to the present invention.

FIG. 2 is a front view showing the coating/developing processingapparatus shown in FIG. 1.

FIG. 3 is a rear view showing the coating/developing processingapparatus shown in FIG. 1.

FIG. 4 is a plan view showing a developing processing unit according toan embodiment of the present invention.

FIG. 5 is a sectional view showing the developing processing unit shownin FIG. 4.

FIG. 6 is an upwardly seen perspective view showing a rinsing nozzleaccording to a first embodiment.

FIG. 7 is an upwardly seen perspective view showing another example ofthe rinsing nozzle shown in FIG. 6.

FIG. 8 is a schematic diagram showing a structure of a rinsing solutionsupplying mechanism according to an embodiment.

FIG. 9 is a schematic diagram showing an operation for supplyingdeveloping solution in a developing process.

FIG. 10 is a schematic diagram showing an operation for supplyingrinsing solution in the developing process.

FIG. 11 is a schematic diagram showing a structure of a rinsing solutionsupplying mechanism according to another embodiment.

FIG. 12 is an enlarged view showing a rinsing nozzle according toanother embodiment of the present invention.

FIG. 13 is an enlarged view showing another example of the rinsingnozzle shown in FIG. 12.

FIG. 14 is a perspective view showing an embodiment of which rinsingsolution is discharged while a substrate is being rotated.

FIG. 15 is a perspective view showing the embodiment of which therinsing solution is discharged while the substrate is being rotated.

FIG. 16 is a plan view describing a rinsing nozzle according to anotherembodiment of the present invention.

FIG. 17 is an upward plan view showing a rinsing nozzle according toanother embodiment of the present invention.

FIG. 18 is a plan view showing the rinsing nozzle according to anotherembodiment of the present invention.

FIG. 19 is a vertical sectional view showing a developing apparatusaccording to a second embodiment of the present invention.

FIG. 20 is a plan view showing the developing apparatus according to thesecond embodiment of the present invention.

FIG. 21 is a vertical sectional view showing a developing solutionsupplying nozzle used in the developing apparatus.

FIG. 22 is a vertical sectional view showing a washing solutionsupplying nozzle used in the developing apparatus.

FIG. 23 is a schematic diagram describing steps of a developing processof the developing apparatus.

FIG. 24 is a schematic diagram describing a washing step of thedeveloping apparatus.

FIG. 25 is a vertical sectional view showing a washing solutionsupplying nozzle used in a developing apparatus according to a thirdembodiment of the present invention.

FIG. 26 is a vertical sectional view showing another washing solutionnozzle used in the developing apparatus according to the otherembodiment.

FIG. 27 is a vertical sectional view showing another washing solutionnozzle used in the developing apparatus according to the presentinvention.

FIG. 28 is a schematic diagram describing another washing method for thedeveloping apparatus according to the present invention.

FIG. 29 is a vertical sectional view showing another washing solutionnozzle used in the developing apparatus according to the presentinvention.

FIG. 30 is a perspective view showing an example of a coating apparatusthat contains the developing apparatus according to the presentinvention.

FIG. 31 is a plan view showing an example of the coating apparatus thatcontains the developing apparatus according to the present invention.

FIG. 32 is a characteristic chart showing an example performed toconfirm an effect of the present invention.

FIG. 33 is a characteristic chart showing an example performed toconfirm an effect of the present invention.

FIG. 34 is a schematic diagram describing a flow of steps of thedeveloping process.

FIG. 35 is a schematic diagram describing steps of a developing processof a conventional developing apparatus.

FIG. 36 is a plan view showing a developing processing unit according toa fourth embodiment of the present invention.

FIG. 37 is a side view showing the front surface of a wafer in the casethat a plurality of nozzles are disposed.

FIG. 38 is a schematic diagram showing a modification of an embodimentshown in FIG. 38.

FIG. 39 is a schematic diagram according to a fifth embodiment of thepresent invention.

FIG. 40 is a schematic diagram showing a modification of the fifthembodiment of the present invention.

BEST MODES FOR CARRYING OUT THE INVENTION

Next, with reference to the accompanying drawings, embodiments of thepresent invention will be described.

First Embodiment

FIG. 1 to FIG. 3 are schematic diagrams showing an overall structure ofa coating/developing processing apparatus according to a firstembodiment of the present invention, where FIG. 1 is a plan view andFIG. 2 and FIG. 3 are a front view and a rear view, respectively.

The coating/developing processing apparatus denoted by reference numeral1 has a cassette station 10, a processing station 12, and an interfaceportion 14 that are integrally connected. The cassette station 10 loadsand unloads a wafer cassette CR from and to the outside of the apparatus1. A wafer cassette CR contains a plurality of semiconductor wafers W,for example 25 wafers W. In addition, the cassette station 10 loads andunloads a wafer W to and from a wafer cassette CR. The processingstation 12 has single-wafer processing units that are multiply piled atpredetermined positions and that perform predetermined processes forwafers W one by one at coating/developing steps. The interface portion14 transfers a wafer W to and from an exposing apparatus 100 disposednext to the processing station 12.

As shown in FIG. 1, in the cassette station 10, a plurality of wafercassettes CR, for example five wafer cassettes CR, are placed atpositions of protrusions 20 a on a cassette holding table 20 so thatthey are arranged in X direction and their wafer access openings facethe processing station 12. A wafer conveying member 22 that is movablein the direction of which the cassettes are arranged (X direction) andin the direction of which wafers are arranged in each wafer cassette CR(Z direction) can selectively access each wafer cassette CR. Inaddition, the wafer conveying member 22 is rotatable in θ direction.Moreover, the wafer conveying member 22 can access a heating processingunit that belongs to a multiply piled third processing unit portion G3shown in FIG. 3 (that will be described later).

As shown in FIG. 1, in the processing station 12, on the rear side ofthe apparatus (an upper portion of the drawing), the cassette station10, the third processing unit portion G3, a fourth processing unitportion G4, and a fifth processing unit portion G5 are disposed. A firstmain wafer conveying device A1 is disposed between the third processingunit portion G3 and the fourth processing unit portion G4. The firstmain wafer conveying device A1 is disposed so that a first main waferconveying member 16 can selectively access a first processing unitportion G1, the third processing unit portion G3, the fourth processingunit portion G4, and so forth. A second main wafer conveying device A2is disposed between the fourth processing unit portion G4 and the fifthprocessing unit portion G5. Like the first main wafer conveying deviceA1, the second main wafer conveying device A2 is disposed so that asecond main wafer conveying member 17 can selectively access a secondprocessing unit portion G2, the fourth processing unit portion G4, thefifth processing unit portion G5, and so forth.

In addition, on the rear side of the first main wafer conveying deviceA1, a heating processing unit is disposed. For example, in the heatingprocessing unit, as shown in FIG. 3, an adhesion unit (AD) 110 thatperforms a hydrophobic process for a wafer W and a heating unit (HP) 113that heats a wafer W are multiply piled. The adhesion unit (AD) may alsohave a mechanism that adjusts the temperature of a wafer W. On the rearside of the second main wafer conveying device A2, a peripheral exposingunit (WEE) 120 that selectively exposes only an edge portion of a waferW, a film thickness verifying unit 119 that verifies the film thicknessof resist coated on a wafer W, and a line width verifying unit 118 thatverifies the line width of a resist pattern are multiply piled. The filmthickness verifying unit 119 and the line width verifying unit 118 maybe disposed outside the coating/developing processing apparatus 1, nottherein. Like the first main wafer conveying device A1, on the rear sideof the second main wafer conveying device A2, a heating processing unit(HP) 113 may be disposed.

As shown in FIG. 3, in the third processing unit portion G3, an opentype processing unit that places a wafer W on a holding table andperforms a predetermined process, a high temperature heating processingunit (BAKE) that performs a predetermined heating process for a wafer Wor the like, a total of for example 10 units that are a coolingprocessing unit (CPL) that accurately controls temperature of a wafer W,a transition unit (TRS) that is a transferring portion that transfers awafer W from the wafer conveying member 22 to the main wafer conveyingmember 16, and a transferring/cooling processing unit (TCP) having atransferring portion as an upper unit and a cooling unit as a lower unitare successively piled from the top. According to the presentembodiment, in the third processing unit portion G3; the third lowestunit is a blank for a spare unit. In the fourth processing unit portionG4, a total of for example ten units that are a post baking unit (POST),a transition unit (TRS) as a wafer transferring portion, a pre bakingunit (PAB) that performs a heating process for a wafer W on which aresist film has been formed, and a cooling processing unit (CPL) aresuccessively piled from the bottom. In the fifth processing unit portionG5, a total of for example 10 units that are a post exposure baking unit(PEB) as heating processing means that performs a heating process for awafer W that has been exposed, a cooling processing unit (CPL), and atransition unit (TRS) are successively piled from the top.

In the fourth processing unit portion G4 shown in FIG. 1, a temperatureadjusting plate T that adjusts the temperature of a wafer W is disposedon the front side of a heating processing unit. A heating plate H thatheats a wafer W is disposed on the rear side of a heating processingunit.

On the front side (a lower portion of the drawing) of the processingstation 12 shown in FIG. 1, the first processing unit portion G1 and thesecond processing unit portion G2 are disposed in Y direction. Solutiontemperature adjusting pumps 24 and 25 that adjust temperatures ofprocessing solutions supplied to the first processing unit portion G1and the second processing unit portion G2 are disposed between the firstprocessing unit portion G1 and the cassette station 10 and between thesecond processing unit portion G2 and the interface portion 14,respectively. In addition, ducts 31 and 32 that supply clean air from anair conditioner (not shown) disposed outside the coating/developingprocessing apparatus 1 to each of the processing unit portions G1 to G5are disposed.

As shown in FIG. 2, in the first processing unit portion G1, fivespinner type processing units each of which places a cup CP that holds awafer W on a spin chuck and performs a predetermined process for thewafer W are successively piled. For example, three resist coatingprocessing units (COT) as resist film forming portions and two bottomcoating units (BARC) each of which forms a reflection protection filmthat prevents exposed light from being reflected are successively piledfrom the bottom. Likewise, in the second processing unit portion G2,five spinner type processing units for example developing processingunits (DEV) as developing processing portions are successively piled.Since it is difficult to drain resist solution in the resist coatingprocessing units (COT) from view points of mechanism and maintenance, itis preferred that they should be disposed as lower units. Of course,when necessary, they can be disposed as upper units.

The lowest units of the first and second processing unit portions G1 andG2 are chemical chambers (CHM) 26 and 28 that supply the foregoingpredetermined processing solution to the processing unit portions G1 andG2.

A pickup cassette CR that can be conveyed and a fixed type buffercassette BR are piled as two units at a front side portion of theinterface portion 14. A wafer conveying member 27 is disposed at acenter portion of the interface portion 14. The wafer conveying member27 can move in the X and Z directions and access the cassettes CR andBR. In addition, the wafer conveying member 27 can rotate in θdirection. Thus, the wafer conveying member 27 can also access the fifthprocessing unit portion G5. In addition, at a rear side portion of theinterface portion 14 shown in FIG. 3, a plurality of high accuracycooling processing units (CPL), for example two units, are piled. Thewafer conveying member 27 can also access the cooling processing units(CPL).

Next, the developing processing unit (DEV) according to the presentinvention will be described in detail. FIG. 4 and FIG. 5 are a plan viewand a sectional view showing the developing processing unit (DEV)according to an embodiment of the present invention.

In the unit, a fan filter unit F is disposed at an upper position of ahousing 41. The fan filter unit F supplies clean air into the housing41. Below the fan filter unit F and nearly at a center position of aunit bottom plate 51 that is smaller than the housing 41 in Y direction,a ring-shaped cup CP is disposed. A spin chuck 42 is disposed inside thecup CP. While the spin chuck 42 is vacuum-sucking a wafer W, the spinchuck 42 is rotated by rotation driving force of a motor 43.

Pins 48 that transfer a wafer W are disposed in the cup CP. The pins 48are raised and lowered by a driving device 47 such as an air cylinder.Thus, while a shutter 52 that can be opened and closed is open, a wafercan be transferred to and from the main wafer conveying member 17through an opening portion 41 a. At a bottom position of the cup CP, adrain opening 45 through which drain solution flows is disposed. A drainpipe 33 is connected to the drain opening 45. The drain pipe 33 isconnected to another drain opening (not shown) using a space N formedbetween the unit bottom plate 51 and the housing 41.

A developing solution nozzle 53 that supplies developing solution ontothe front surface of a wafer W is formed in an elongated shape havingnearly the same length as the diameter of the wafer W. The developingsolution nozzle 53 is connected to a developing solution tank (notshown) in the chemical chamber (CHM) (see FIG. 2) through a supplyingpipe 34. The developing solution nozzle 53 is connectable anddisconnectable to and from a nozzle holding member 60 of a nozzlescanning arm 36. The nozzle scanning arm 36 is mounted on an upper endportion of a vertical supporting member 49 that is horizontally movableon a guide rail 44 that is placed on the unit bottom plate 51 and thatextends in one direction (Y direction). For example, the nozzle scanningarm 36 is movable in the Y direction along with the vertical supportingmember 49 by for example a belt driving mechanism. Thus, unless thedeveloping solution nozzle 53 supplies the developing solution, thedeveloping solution nozzle 53 stands by in a developing solution nozzlebath 46 disposed outside the cup CP. When the developing solution nozzle53 supplies the developing solution, the developing solution nozzle 53is moved so that it is placed above the wafer W. The developing solutionnozzle 53 has a plurality of discharging holes (not shown) at an lowerend portion thereof. Developing solution is discharged from theplurality of discharging holes.

In addition, a guide rail 144 through which a rinsing nozzle is moved isdisposed beside the cup CP along the foregoing guide rail 44. A verticalsupporting member 149 is movably disposed on the guide rail 144 in the Ydirection by for example a belt driving mechanism. A motor 78 is mountedon an upper portion of the vertical supporting member 149. A rinsingnozzle arm 136 is mounted on the motor 78 by for example a ball screwmechanism so that the rinsing nozzle arm 136 is movable in the Xdirection. A rinsing nozzle 153 is mounted on the rinsing nozzle arm 136through a nozzle holding member 160.

The rinsing nozzle arm 136 is for example movable in upper and lowerdirections (Z direction) by the vertical supporting member 149 that hasfor example an air cylinder mechanism. Thus, the height of the rinsingnozzle 153 is adjusted by the rinsing nozzle arm 136. In reality, theheight of a wafer W held by the spin chuck 42 is adjusted by the rinsingnozzle arm 136. An X-Y-Z moving mechanism that moves the rinsing nozzle153 is controlled by a moving mechanism controller 40. Thus, the rinsingnozzle 153 can be moved from the rinsing nozzle bath 146 in which therinsing nozzle 153 stands by to the wafer W held in the cup CP. Withrinsing solution discharged from the rinsing nozzle 153 to the wafer,developing solution on the wafer is washed away. In FIG. 5, the rinsingnozzle 153 is omitted.

FIG. 6 and FIG. 7 are upwardly seen perspective views showing therinsing nozzle 153 according to the first embodiment. Like thedeveloping solution nozzle 53, the rinsing nozzle 153 is formed in anelongated shape. As shown in FIG. 6, at a lower position of the rinsingnozzle 153, a slit-shaped discharging opening 64 that discharges rinsingsolution supplied from a supplying pipe 63 onto a wafer W is formed.FIG. 7 shows a rinsing nozzle according to another embodiment. Likewise,the rinsing nozzle has a plurality of holes 66 from which rinsingsolution supplied from the supplying pipe 63 is discharged onto a wafer.

FIG. 8 is an outlined schematic diagram showing a supplying mechanismthat supplies rinsing solution.

A first supplying pipe 61 is connected to a pure water tank 37 thatstores pure water. A surfactant tank 38 stores for example surfactantthat weakens the surface tension of pure water. A second supplying pipe62 is connected to the surfactant tank 38. According to the presentembodiment, as surfactant, for example non-ionic surfactant is used. Thesupplying pipes 61 and 62 are connected to for example a static mixer56. The static mixer 56 is connected to the rinsing nozzle 153 throughthe supplying pipe 63. A first bellows pump 54 is connected between thepure water tank 37 and the static mixer 56. The first supplying pipe 61connects the pure water tank 37 and the first bellows pump 54. The firstbellows pump 54 causes pure water to be supplied to the static mixer 56.A second bellows pump 55 is connected between the surfactant tank 38 andthe static mixer 56. The second supplying pipe 62 connects thesurfactant tank 38 and the second bellows pump 55. The second bellowspump 55 causes surfactant to be supplied to the static mixer 56.Operation amounts of the first bellows pumps 54 and 55 are controlled bya controlling portion 65. The static mixer 56 mixes the pure water andthe surfactant and produces rinsing solution that has a predeterminedconcentration whose surface tension is lower than pure water. Theproduced rinsing solution is supplied to the rinsing nozzle 153 throughthe supplying pipe 63.

Next, an example of steps of a process of the coating/developingprocessing apparatus 1 that has the foregoing structure will bedescribed.

In the cassette station 10, the wafer conveying member 22 accesses onthe cassette holding table 20 a cassette CR that contains wafers W thathave not been processed and takes out one wafer W therefrom. The wafer Wis transferred to the first main conveying device A1 through thetransferring/cooling processing unit (TCP). The wafer W is loaded intofor example the adhesion unit (AD) 110. The adhesion unit (AD) 110performs a hydrophobic process for the wafer W. Thereafter, the wafer Wis conveyed to for example the bottom coating unit (BARC). The bottomcoating unit (BARC) may form a reflection protection film on the wafer Wso as to prevent exposed light from being reflected from the wafer.

Thereafter, the wafer W is loaded into the resist coating processingunit (COT). The resist coating processing unit (COT) forms a resist filmon the wafer W. After the resist film has been formed on the wafer W,the first main conveying device A1 conveys the wafer W to the prebakingunit (PAB). In the prebaking unit (PAB), the wafer W is placed on thetemperature adjusting plate T. While the temperature of the wafer W isbeing adjusted, it is moved toward the heating plate H. The wafer W isplaced on the heating plate H. A heating process is performed for thewafer W on the heating plate H. After the heating process has beenperformed for the wafer W, it is transferred to the first main conveyingdevice A1 through the temperature adjusting plate T. Thereafter, acooling process is performed for the wafer W at a predeterminedtemperature by the cooling processing unit (CPL).

Thereafter, the wafer W is taken out by the second main conveying deviceA2. The wafer W may be conveyed to the film thickness verifying unit119. The film thickness verifying unit 119 measures the film thicknessof resist on the wafer W. Thereafter, the wafer W is transferred to theexposing apparatus 100 through the transition unit (TRS) of the fifthprocessing unit portion G5 and the interface portion 14. The exposingapparatus 100 performs an exposing process for the wafer. W. After theexposing process has been performed, the wafer W is transferred to thesecond main conveying device A2 through the interface portion 14 and thetransition unit (TRS) of the fifth processing unit portion G5.Thereafter, the wafer W is conveyed to the post exposure baking unit(PEB). The post exposure baking unit (PEB) performs a temperatureadjusting process and a heating process for the wafer W. After theexposing process has been completed for the wafer W, it may betemporarily placed in a buffer cassette BR in the interface portion 14.

Thereafter, the wafer W is conveyed to the developing processing unit(DEV). The developing processing unit (DEV) performs a developingprocess for the wafer W. After the developing process has beenperformed, a predetermined heating process (post baking) may beperformed for the wafer W. After the developing process has beenperformed, the cooling unit (COL) performs a predetermined coolingprocess for the wafer W. Thereafter, the wafer W is returned to thecassette CR through an extension unit (EXT).

Next, an operation of the developing processing unit (DEV) will bedescribed.

First of all, as shown in FIG. 9( a) and (b), while the developingsolution nozzle 53 is moving in the direction denoted by arrow A on awafer W that is stationary, the developing solution nozzle 53 dischargesdeveloping solution onto the wafer W. As a result, the developingsolution is deposited on the wafer W. While the developing solution isdeposited on the entire surface of the wafer, a developing process isperformed for a predetermined time period, for example 60 seconds.Thereafter, as shown in FIG. 10( a), the rinsing nozzle 153 is placed ata predetermined position outside the periphery portion of the wafer W.At that point, the rinsing nozzle 153 is placed at a position of whichthe distance t between the lower end portion of the rinsing nozzle 153and the front surface of the wafer W is smaller than the thickness ofthe developing solution denoted by reference numeral 50. The rinsingnozzle 153 is placed at a position around 4 mm apart from the frontsurface of the wafer W. Like the developing solution nozzle 53 shown inFIG. 9( a), while the rinsing nozzle 153 is being moved above the waferso that the distance t is kept, the rinsing nozzle 153 dischargesrinsing solution onto the wafer as shown in FIG. 10( b).

Since the rinsing nozzle 153 is moved while it is in contact with thedeveloping solution 50, the impact of the rinsing solution against thewafer is lower than the impact in the case that rinsing solution isdischarged from the rinsing nozzle 153 that is not in contact with thedeveloping solution. Thus, the pattern collapse can be effectivelyprevented. In addition, when an elongated rinsing nozzle is used, sincerinsing solution can be discharged onto a wide area of the wafer at atime. Thus, the washing time period can be shortened. Moreover, sincethe rinsing nozzle 153 is moved while it is in contact with thedeveloping solution, the rinsing nozzle 153 can push away and remove thedeveloping solution to some extent and replace it with the rinsingsolution. Thus, the developing solution can be effectively replaced withthe rinsing solution.

In addition, since the rinsing nozzle 153 is placed at such a position,while the rinsing nozzle 153 is discharging rinsing solution, it iscontinuously unified with rinsing solution that has been discharged onthe wafer. Thus, the impact of the rinsing solution against the waferdoes not almost take place.

It is preferred that the discharging amount of rinsing solution shouldbe 40 ml to 500 ml per wafer. If the discharging amount of rinsingsolution exceeds 500 ml, the flow rate of discharged rinsing solutionmay increase. Thus, the pattern collapse is apt to take place. Incontrast, if the discharging amount of rinsing solution is smaller than40 ml, there is a possibility of which rinsing solution is not beequally discharged on the entire surface of the wafer. The rinsingnozzle 153 may be reciprocally moved above the wafer so as to supply apredetermined amount of rinsing solution onto the wafer.

After the rinsing solution has been supplied onto the entire surface ofthe wafer W, it is rotated so as to shake off the rinsing solution fromthe wafer W using centrifugal force and dry the wafer W. Since thesurface tension of the rinsing solution weakens, when the wafer W isshake-dried, the pattern collapse does not take place.

As described above, according to the present embodiment, since rinsingsolution whose surface tension weakens is discharged by the elongatedrinsing nozzle 153 having nearly the same length as the diameter of thewafer W, the rinsing solution can be equally spread on the substrate.Thus, the pattern collapse can be prevented. It should be noted that thelength of the rinsing nozzle 153 may be larger than the diameter of thewafer W.

FIG. 11 is a schematic diagram showing a structure of a rinsing solutionsupplying mechanism according to another embodiment. In FIG. 11,structural elements similar to those in FIG. 8 are denoted by similarreference numerals and their description will be omitted.

The rinsing solution supplying mechanism also has a dispersant tank 67that stores dispersant. A third supplying pipe 59 is connected to thedispersant tank 67. The third supplying pipe 59 is connected to thestatic mixer 56. A third bellows pump 58 is disposed between thedispersant tank 67 and the static mixer 56. Dispersant stored in thedispersant tank 67 is for example negative ionic surfactant. Thecontrolling portion 65 controls the operation of the third bellows pump58 so as to mix dispersant with a mixture of pure water and surfactantand produce rinsing solution.

When rinsing solution containing impurities such as particles issupplied onto a wafer, there is a possibility of which the impuritiesgather and adhere to a resist pattern. However, according to the presentembodiment, since the dispersant causes impurities to disperse, theimpurities can be washed away along with rinsing solution that flowsfrom the wafer in the shake-drying process.

FIG. 12 and FIG. 13 are enlarged sectional views showing rinsing nozzlesaccording other embodiments.

In a rinsing nozzle 75A shown in FIG. 12, a lower end portion of adischarging portion 70 that discharges rinsing solution has a forwardside 70 a and an opposite side 70 b in the direction denoted by arrow E.The forward side 70 a is formed in a right-angle shape, whereas theopposite side 70 b is formed in a curved shape. Reference numeral 70 crepresents a flow path of rinsing solution. Since the nozzle 75A hassuch a shape, when the nozzle 75A is moved while it is in contact withthe developing solution 50, the right-angle portion 70 a can promote anoperation for pushing out and removing the developing solution 50. Inaddition, the curved portion 70 b can promote an operation for equallyflattening discharged rinsing solution.

In a rinsing nozzle 75B shown in FIG. 13, a discharging flow path 70 dis formed with angle against the moving direction of the rinsing nozzle75B (denoted by arrow E). Thus, since the nozzle 75B has an operationfor pushing out developing solution 50 on the wafer in the movingdirection of the nozzle. Thus, the developing solution 50 can beeffectively replaced with rinsing solution 57.

The discharging flow paths 70 c and 70 d of the rinsing nozzles 75A and75B may be composed of a plurality portions or formed in a slit shape.

Next, with reference to FIG. 14 and FIG. 15, an example of which while awafer W is being rotated, rinsing solution is discharged will bedescribed.

In FIG. 14, a rinsing nozzle 153A that has nearly the same length as thediameter of the wafer W is placed at a center portion of the wafer W. Inthe state, while the wafer W is being rotated, the rinsing nozzle 153Adischarges the rinsing solution. Thus, when the wafer W is rotated for180° or more, rinsing solution 57 can be equally supplied onto theentire surface of the wafer W. As a result, since the rinsing solutionis not discharged to the outside of the wafer W, the amount of rinsingsolution that is used can be reduced in comparison with the foregoingembodiment of which the nozzle is moved.

In FIG. 15, one end of a rinsing nozzle 153B that has nearly the samelength as the radius of the wafer W is placed at a center portion of thewafer W. While the wafer W is being rotated, the rinsing nozzle 153Bdischarges rinsing solution onto the wafer W. Thus, when the wafer W isrotated for 360° or more, the rinsing solution 57 can be equallysupplied onto the entire surface of the wafer W. Likewise, in thisexample, since the rinsing solution is not discharged outside the waferW, the amount of rinsing solution that is used can be reduced incomparison with the foregoing embodiment of which the nozzle is moved.In addition, since the length of the rinsing nozzle 153B can bedecreased, the production cost can be reduced.

In addition, in the embodiments shown in FIG. 14 and FIG. 15, the numberof rotations of the wafer W is 500 rpm or less. Since the wafer W isrotated as a relatively low number of rotations, the impact of therotations against the wafer can be suppressed. Thus, the patterncollapse can be prevented. In this example, it is preferred that thenumber of rotations of the wafer W should be 100 rpm or less.

Next, with reference to FIG. 16, a rinsing nozzle according to anotherembodiment will be described. Like the example shown in FIG. 14,according to this embodiment, while a wafer is being rotated, a rinsingnozzle 80 that is stationary discharges rinsing solution onto the wafer.The rinsing nozzle 80 has the inclined flow path 70 d as shown in FIG.13. Discharging direction D1 of rinsing solution from a center portionof the rinsing nozzle 80 to one end portion 80 a is opposite todischarging direction D2 of rinsing solution from the center portion toanother end portion 80 b as denoted by arrows. This is because when thewafer W is rotated in the direction of arrow P, rinsing solution isdischarged in the relative rotating direction of the rinsing nozzle 80against the wafer W. Thus, the rinsing nozzle 80 has an operation forpushing out and removing developing solution on the wafer. As a result,developing solution can be effectively replaced with rinsing solution.

Next, rinsing nozzles according to other embodiments will be described.FIG. 17 is bottom views showing the rinsing nozzles. In the rinsingnozzle shown in FIG. 17( a), a plurality of discharging holes 66 areformed so that the diameters thereof are gradually decreased from thecenter portion of the nozzle to the end portions thereof. In the rinsingnozzle shown in FIG. 17( b), a plurality of discharging holes 66 areformed so that the pitches thereof are gradually increased from thecenter portion of the nozzle to the end portions thereof. When rinsingsolution is discharged by these rinsing nozzles, the flow amount ofrinsing solution discharged from the center portion of the wafer islarger than the flow amount of rinsing solution discharged from theperiphery portion of the wafer. Thus, since the rinsing solution flowsfrom the center portion of the wafer to the periphery portion thereof,the developing solution can be effectively removed and the rinsingsolution can be equally supplied onto the entire surface of the wafer.These nozzles are especially effective when rinsing solution isdischarged while the wafer is being rotated as shown in FIG. 14.

FIG. 18 is front views showing rinsing nozzles according to otherembodiments. A rinsing nozzle shown in FIG. 18( a) has a plurality ofdischarging holes 68 that discharge rinsing solution onto the wafer W.The discharging holes 68 are bent with angles that are gradually andoutwardly increased from the center portion of the nozzle to the endportions thereof. A rinsing nozzle shown in FIG. 18( b) has a lengththat is nearly the same as the radius of the wafer W. The rinsing nozzleshown in FIG. 18( b) has a plurality of discharging holes 68 thatdischarge rinsing solution onto the wafer W. The discharging holes 68are bent with angles that are gradually and outwardly increased from thecenter portion of the nozzle to the periphery portion thereof. When eachof these rinsing nozzles discharges rinsing solution onto the wafer W,processing solution can be removed so that it is spread from the centerportion to the wafer W to the periphery portion thereof. As a result,the rinsing solution can be equally supplied onto the wafer W. Thesenozzles are especially useful when they discharge rinsing solution whilethe wafer is being rotated as shown in FIG. 14.

The present invention is not limited to the foregoing embodiments.Instead, various modifications of the present invention can be made.

According-to the foregoing embodiments, rinsing solution whose surfacetension weakens is supplied onto a wafer on which developing solutionhas been supplied. Alternatively, after developing solution is replacedwith pure water, rinsing solution whose surface tension weakens may besupplied onto the wafer so as to replace the pure water with the rinsingsolution.

The rinsing nozzle shown in FIG. 13 has the discharging flow path 70 dthat is inclined against the wafer. Alternatively, the rinsing nozzleshown in FIG. 12 that discharge rinsing solution may be inclined.

According to the embodiments shown in FIG. 14 and FIG. 15, while thewafer W is being rotated, rinsing solution is discharged. Alternatively,with rotating mechanisms disposed in the rinsing nozzles 153A and 153B,the nozzles 153A and 153 b may be rotated on a plane in parallel withthe surface of the wafer.

In addition, the temperature of pure water used for rinsing solution maybe adjusted. In this case, it is preferred that the temperature of purewater should be kept in the range from 50° C. to 60° C. When thetemperature of pure water is relatively high, the surface tensionthereof can be suppressed. As a result, the surface tension of therinsing solution can be suppressed. Thus, the amount of surfactant to beadded can be decreased. The upper limit of the temperature of the purewater is designated at 60° C. because if the temperature of the purewater exceeds 60° C., resist on the wafer may melt.

According to the foregoing embodiments, the rinsing nozzle is movedwhile it is in contact with developing solution on the wafer. However,when resist having a low aspect ratio free from the pattern collapse isprocessed, the rinsing nozzle may discharge rinsing solution while therinsing nozzle is not in contact with developing solution.

In addition, according to the foregoing embodiments, a semiconductorwafer is used as a substrate. Alternatively, a glass substrate used fora liquid crystal device may be used.

Second Embodiment

Next, a second embodiment of the present invention will be described.FIG. 19 is an outlined sectional view showing a developing apparatus andFIG. 20 is an outlined plan view thereof. In the drawings, referencenumerals 202 represents a spin chuck that vacuum-sucks and almosthorizontally holds the center portion on the rear side of for example an8-inch wafer W as a substrate. The spin chuck 202 is structured so thatit is rotated, raised, and lowered by a driving portion 220. While thewafer W is being sucked and held by the spin chuck 202, an outer cup 230and an inner cup 231 surround the periphery of the wafer W. An uppercylinder portion of the inner cup 231 is inclined inwardly so that anupper opening portion thereof is narrower than a lower opening portionthereof. When the outer cup 230 is raised and lowered by araising/lowering portion 232, the inner cup 231 is raised and lowered ina part of the moving range of the outer cup 230. A disc 233 thatsurrounds a rotating shaft of the spin chuck 202 is disposed below thespin chuck 202. In addition, a solution receiving portion 235 has aconcave portion formed around the entire periphery of the disc 233. Thesolution receiving portion 235 also has a bottom drain opening 234. Aring member 236 that approaches the rear surface of the wafer W isdisposed at the periphery portion of the disc 233. The ring member 236has a section formed in a mountain shape.

Next, a developing solution supplying nozzle 204 as developing solutionsupplying means that supplies (coats) developing solution onto a wafer Wthat is sucked and held by the spin chuck 202 will be described. Asshown in FIG. 19 and FIG. 21, the developing solution supplying nozzle204 has a discharge opening 240 formed in for example a slit shape and adeveloping solution reservoir portion 242. The discharging opening 240is disposed in the longitudinal direction of the nozzle so as to form adischarging area of developing solution for a length that is equal to orlarger than the width of the effective area (device forming area) of thewafer W. The developing solution reservoir portion 242 is connected tothe discharging opening 240 through a developing solution flow path 241.The developing solution reservoir portion 242 is connected to adeveloping solution supplying portion 244 through a supplying path 243,for example a pipe. An open/close valve V1 is disposed in the middle ofthe supplying path 243. In the drawing, reference numeral 245 representsa buffering rod that is for example a quartz rod or a porous memberdisposed in the discharging opening 240. The buffering rod 245 allowsthe discharging pressure of the developing solution in the flow path 241to become equal in the longitudinal direction of the developing solutionsupplying nozzle 204. In addition, the buffering rod 245 preventsdeveloping solution from leaking out from the discharging opening 240.As shown in FIG. 20, the developing solution supplying nozzle 204 can beraised and lowered by a first moving mechanism 246. In addition, thedeveloping solution supplying nozzle 204 can be moved in the lateraldirection along a guide rail G disposed outside the outer cup 230. Thedeveloping solution supplying nozzle 204 is not limited to the foregoingstructure. In other words, the developing solution supplying nozzle 204may have only the slit-shaped discharging opening 240, not the bufferingrod 245.

Next, a washing solution supplying nozzle 205 as washing solutionsupplying means that supplies washing solution onto a wafer W will bedescribed. As shown in FIG. 22, the washing solution supplying nozzle205 has a discharging opening 250 and a washing solution reservoirportion 252. The discharging opening 250 is formed in a slit shape andextends in the longitudinal direction of the nozzle so as to form adischarging area of washing solution for a length that is equal to orlarger than an effective area (device forming area) of the wafer W. Thewashing solution reservoir portion 252 is connected to the dischargingopening 250 through a washing solution flow path 251. The washingsolution reservoir portion 252 is connected to a washing solutionsupplying portion 254 through a supplying path 253, for example a pipe.An open/close valve V2 is disposed in the middle of the supplying path253. In the drawing, reference numeral 255 represents a buffering rodhaving the foregoing function.

The washing solution supplying nozzle 205 can be raised and lowered by asecond moving mechanism 256. In addition, the washing solution supplyingnozzle 205 can be horizontally moved from a standby position, forexample a position of one end of the guide rail G, to a positionopposite thereto through the wafer W. In FIG. 20, the positions of thefirst moving mechanism 246 and the second moving mechanism 256 arestandby positions of the developing solution supplying nozzle 204 andthe washing solution supplying nozzle 205 that are placed when they donot operate. In the drawing, standby portions 257 and 258 of the firstmoving mechanism 246 and the second moving mechanism 256 are disposed.The standby portions 257 and 258 are composed of plate members that canbe raised and lowered. The outer cup 230, the inner cup 231, theraising/lowering portion 232, the first moving mechanism 246, and thesecond moving mechanism 256 compose one unit surrounded by a box-shapedhousing 259. A wafer W is loaded and unloaded into and from the housing259 by a conveying arm (not shown) through a conveying opening (notshown).

The driving portion 220, the raising/lowering portion 232, the firstmoving mechanism 246, the second moving mechanism 256, and theopen/close valves V1 and V2 are connected to a controlling portion 206.The controlling portion 206 controls each portion so when the spin chuck202 is raised and lowered by the driving portion 220, the open/closevalves V1 and V2 are opened and closed, the developing solutionsupplying nozzle 204 is moved by the first moving mechanism 246, and thewashing solution supplying nozzle 205 is moved by the second movingmechanism 256. At that point, the controlling portion 206 controlstimings of opening/closing operations of the valves V1 and V2, timingsof start and stop of movement of the first moving mechanism 246 and thesecond moving mechanism 256, and moving speeds thereof in accordancewith a process recipe that has been set.

Next, with reference to FIG. 23, steps of a developing process of theforegoing developing apparatus will be described. When the outer cup 230and the inner cup 231 have been placed at their lower positions, thespin chuck 202 is raised to a position above the outer cup 230. A waferon which resist has been coated at the preceding step and for which anexposing process has been performed is transferred from a conveying arm(not shown) to the spin chuck 202. Thereafter, the spin chuck 202 islowered so that the wafer W is placed at a predetermined positiondenoted by for example a dotted line shown in FIG. 19.

Thereafter, the developing solution supplying nozzle 204 is guided to adischarging start position between the outer cup 230 and the peripheryof the wafer W by the first moving mechanism 246. Thereafter, thedischarging opening 240 is placed at a position higher than the level ofthe front surface of the wafer W by around 1 mm. Thereafter, theopen/close valve V1 is opened. While developing solution D is beingdischarged from the discharging opening 240, as shown in FIG. 23( a),the developing solution supplying nozzle 204 is moved from the one endside of the wafer W to the other end side thereof at a scanning speed offor example around 65 mm/second. The developing solution supplyingnozzle 204 discharges the developing solution D onto the front surfaceof the wafer W so as to form a developing solution film of around 1 mm.Thereafter, as shown in FIG. 23( b), this state is kept for apredetermined time period, for example around 60 seconds. In otherwords, a stationary development is performed so as to promote thedevelopment reaction for the wafer W. After the developing solutionsupplying nozzle 204 has passed through the other end side of the waferW, the open/close valve V1 is closed so as to stop dischargingdeveloping solution D. Thereafter, the developing solution supplyingnozzle 204 is returned to the standby portion 257.

Thereafter, the washing solution supplying nozzle 205 is guided to thedischarging start position by the second moving mechanism 256.Thereafter, the washing solution supplying nozzle 205 is lowered so thatthe separate distance L between the tip of the discharging opening 250as the lower end portion of the nozzle and the front surface of thewafer W becomes 0.4 mm or less, for example 0.3 mm. The front surface ofthe wafer W means the front surface of a resist film. However, thethickness of a resist film in which a development defect concerned inthe present invention normally takes place is around 0.5 μm. Thus, thethickness of the resist film is sufficiently smaller than the separatedistance L. Thereafter, as shown in FIG. 23( c), the open/close valve V2is opened and washing solution R, for example pure water, is dischargedfrom the discharging opening 250 with a flow amount of for example 2.0litters/minute (flow speed of 0.05 m/second), for example a dischargingpressure of 1.7 kgf/cm² (0.17 MPa). In addition, the washing solutionsupplying nozzle 205 is moved from the one end side of the wafer W tothe other end side thereof at a scanning speed of for example around 120mm/second. Hereinafter this operation is referred to as scan-washing.Thereafter, the scan-washing is repeatedly performed two times. In otherwords, a total of three times the scan-washing is performed. In theexample, since it takes around 1.7 seconds to scan an 8-inch wafer Wfrom the one end to the other end, the scan-washing takes around 5.1seconds. The open/close valve V2 is closed. The washing solutionsupplying nozzle 205 stops discharging the rinsing solution R.Thereafter, the washing solution supplying nozzle 205 is returned to thestandby portion 258.

Next, how the front surface of the wafer W is washed will be describedin detail. As shown in FIG. 24, when the washing solution supplyingnozzle 205 scans the wafer W, the side wall of the washing solutionsupplying nozzle 205 pushes the developing solution D on the wafer W inthe forward direction. As a result, a flow of solution takes place. Thisflow sweeps out a front layer portion of deposit (development paddle) ofresist in a valley portion of a pattern on the forward side. Thereafter,the washing solution R discharged at a predetermined dischargingpressure from the discharging opening 250 of the washing solutionsupplying nozzle 205 sweeps out remaining deposit that adheres to thebottom portion and corner portion of the pattern. The deposit swept awayfrom the valley portion of the pattern is diluted with the washingsolution R supplied to the wafer W. At a later step, the diluted depositis removed from the wafer W along with the washing solution R. When thescan-washing is performed first time, most of deposit may be removed.When the scan-washing is performed second time and later, the wafer Wmay be rotated at for example 10 to 1000 rpm. Of course, when thescan-washing is performed, the number of rotations of the wafer W may bevaried.

Returning to FIG. 23, after the developing solution D on the frontsurface of the wafer W is replaced with the washing solution R, theouter cup 230 and the inner cup 231 are placed at their upper positionsby the raising/lowering portion 232. As shown in FIG. 23( d), the waferW is spin-dried by rotating the wafer W at for example around 4000 rpmso as to shake off the washing solution R. Thereafter, the wafer W isunloaded from the developing apparatus by a conveying arm (not shown).

According to the foregoing embodiment, a lateral push-out operation ofwhich the washing solution R discharged from the discharging opening 250collides with the front surface of the wafer W and a push-out operationof the side wall of the washing solution supplying nozzle 205 arecombined to produce strong exhaust force that laterally acts and causethe developing solution D containing a resist component on the wafer Wto be discharged. As a result, exhaust force superior to the adhesiveforce (frictional force the developing solution D against the wafer Wand the wall surface of the pattern) acts for deposit at a bottomportion and a corner portion of a pattern. Thus, developing solution anda resist component can be prevented from remaining on the front surfaceof the wafer W. As a result, a resist pattern whose development defectsare small can be obtained.

Third Embodiment

Next, a third embodiment of the present invention will be described.According to the third embodiment, air supplying means is added to thewashing solution supplying nozzle 205 shown in FIG. 22. The dischargingopening 250 of the nozzle 205 according to the present embodiment islonger than that according to the foregoing embodiments. As shown inFIG. 25, the air supplying means has a blowing opening 270 that blowsgas, for example air, to the front surface of the wafer W. The blowingopening 270 is disposed at a side wall portion in the moving directionof the washing solution supplying nozzle 205. The blowing opening 270 isdisposed above the surface of the developing solution D. The blowingopening 270 is inclined against the axial line (discharging direction)of the discharging opening 250 by an angle of .theta., for example 0° to60°. In addition, the blowing opening 270 is composed of a plurality ofair supplying holes each having a diameter of 0.4 mm. The air supplyingholes are disposed at predetermined intervals in the longitudinaldirection of the washing solution supplying nozzle 205. In addition, theblowing opening 270 is connected to one end of an air supplying path272, for example a pipe, through an air reservoir portion 271 in thewashing solution supplying nozzle 205. A gas supplying portion 273 isconnected to an opposite end of the air supplying path as the airreservoir portion 271. An open/close valve V3 is connected in the middleof the air supplying path 272. In this case, after the wafer W has beenstationary-developed at the steps shown in FIG. 23( a) and (b), thewashing solution R is supplied to the wafer W from the washing solutionsupplying nozzle 205 in the same condition as the foregoing example. Inaddition, air is blown from the blowing opening 270 to the wafer W witha flow amount of for example 2.0 litters/minute. The blowing opening 270may be disposed below the surface of the developing solution D. However,in this case, since the discharging opening 250 of the washing solutionsupplying nozzle 205 becomes dirty, it is preferred that it should befrequently cleaned. Thus, it is desired that the blowing opening 270should be disposed above the surface of the developing solution D.supplying nozzle 205 scans the wafer W, gas blown from the blowingopening 270 disposed in the scanning direction to the developingsolution D placed in the forward direction causes the developingsolution D on the wafer W to flow, the flow of the developing solution Dto fling up deposit of the resist, and the washing solution R dischargedfrom the discharge opening 250 that preceded by the air blowing opening270 to sweep away the deposit of the resist. In addition, the washingsolution R discharged from the discharging opening 250 sweeps out thedeposit. As a result, the washing effect is improved. Thus, deposit thatresides on the front surface of the wafer W is suppressed. Thus,according to the present embodiment, the same effect as the foregoingembodiments can be obtained.

The blowing opening 270 is not limited to the foregoing structure ofwhich it is inclined. Alternatively, the blowing opening 270 may bevertically formed so that it blows gas to a position immediatelyfollowed by the discharging opening 250 of the washing solution R asshown in FIG. 26( a). In addition, as shown in FIG. 26( b), the blowingopening 270 may be formed in both vertical and diagonal directions.Alternatively, as shown in FIG. 26( c), the blowing opening 270 may blowair to a position (point P in the drawing) to which air is blown fromthe inclined blowing opening 270 shown in FIG. 25. In such structures,since air is blown to the developing solution D, deposit of resist isflung up. Thus, according to the present embodiment, the same effect asthe foregoing embodiments can be obtained.

According to the present invention, the washing solution supplyingnozzle 205 is not limited to the structure of which only one slit-shapeddischarging opening is disposed. Alternatively, as shown in FIG. 27, thewashing solution supplying nozzle 205 may have a plurality ofslit-shaped discharging openings 250 a, 250 b, and 250 c disposed in themoving direction of the washing solution supplying nozzle 205. Thedischarge openings 250 a, 250 b, and 250 c are respectively connected tothe washing solution flow paths 251 a, 251 b, and 251 c. In FIG. 27,reference numerals 255 a, 255 b, and 250 c represent buffering rods thatare respectively disposed in the discharge openings 250 a, 250 b, and250 c. In addition, flow amount adjusting portions, for example flowamount adjusting valves V2 a, V2 b, and V2 c, may be disposed so as toallow flow amounts of the discharging openings 250 a, 250 b, and 250 cto be adjusted. In this case, although the flow amounts of thedischarging openings may be the same, it is preferred that the flowamount of the forward discharging opening 250 a should be the lowest andthe flow amounts of the discharging openings 250 b and 250 c should begradually increased in the range from for example 0.5 to 4.0liters/minute so that after deposit of small particles is swept away,deposit of large particles are swept away. In such a structure, the sameeffect as the foregoing structure can be obtained. When the supplyingamount of the washing solution R is increased, the wafer W can be washedin a short washing time period.

In addition, according to the present invention, after the wafer W iswashed as shown in FIG. 23( c), the wafer W may be spin-washed as shownin FIG. 28. In other words, after the wafer W is washed with the washingsolution supplying nozzle 205 in the same condition as the foregoingembodiments and the washing solution supplying nozzle 205 is returned,another washing solution supply nozzle 208 that supplies the washingsolution R to the center portion of the wafer W is placed at a positionopposite to the center portion of the wafer W and apart therefrom by forexample around 2 mm. Thereafter, the wafer W is rotated at for examplearound 100 to 1000 rpm. In addition, the washing solution R is suppliedonto the front surface of the wafer W with a flow amount of 1litter/minute. After a predetermined time period, for example 5 seconds,has elapsed, the washing solution R is stopped and the wafer W isspin-dried. In this case, the conventional scan-washing operation andthe spin-washing operation using centrifugal force are combined toimprove the washing effect and obtain the same effect as the foregoingembodiments.

Alternatively, according to the present invention, after the developingsolution D has been supplied onto the front surface of the wafer W andthe stationary development has been completed, before the washingsolution R is supplied, the spin chuck 202 may rotate the wafer W at forexample around 100 rpm to 1000 rpm for a predetermined time period, forexample 0.5 to 3 seconds. In this case, before the washing solution R issupplied, the developing solution D on the wafer W can be shaken off tosome extent by centrifugal force. Thus, in addition to the washingoperation of the washing solution R that is performed next, the washingeffect is further improved. As a result, the same effect as theforegoing embodiments can be obtained.

In addition, according to the present invention, the discharging opening250 is not limited to the slit shape. Alternatively, discharging holeshaving a diameter of around 0.4 mm each may be disposed at intervals inthe longitudinal direction on the lower surface side of the nozzle. Inaddition, the washing solution supplying nozzle 205 and the developingsolution supplying nozzle 204 may not be separate nozzles. For example,as shown in FIG. 29, a common nozzle 207 having a common dischargingopening 270 may be connected to the developing solution supplyingportion 244 and the washing solution supplying portion 254 through thesupplying paths 243 and 253. By switching the valves V1 and V2, thedeveloping solution D or the washing solution R may be supplied.

Next, with reference to FIG. 30 and FIG. 31, an example of acoating/developing apparatus of which the foregoing developing apparatusis incorporated into a developing unit will be described. In thedrawings, reference letter B1 represents a cassette holding portion thatair-tightly loads and unloads to and from the coating/developingapparatus a cassette C that contains for example 13 wafers W assubstrates. The cassette holding portion B1 has a holding table 291, anopen/close portion 292, and transferring means 293. The. holding table291 has a holding portion 291 a that can hold a plurality of cassettesC. The open/close portion 292 is disposed on a front wall surface of theholding table 291. The transferring means 293 takes a wafer W from acassette C through the open-close portion 292.

A far side of the cassette holding portion B1 is connected to aprocessing portion B2 surrounded by a housing 300. In the processingportion B2, shelf units U1, U2, and U3 and main conveying means 301A and301B are alternately disposed in the order viewed from the near side.Each of the shelf units U1, U2, and U3 has heating units and coolingunits that are multiply piled. Each of the main conveying means 301A and301B transfers a wafer W among individual processing units including acoating/developing unit that will be described later. In other words,the shelf units U1, U2, and U3 and the main conveying means 301A and301B are disposed in a row viewed from the cassette holding portion B1.Each connecting portion has an opening portion (not shown) through whicha wafer is conveyed. The wafer W can be freely conveyed from the shelfunit U1 on one end side of the processing portion B2 to the shelf unitU2 on the other end side thereof. The main conveying means 301A and 301Bare disposed in a space surrounded by partition walls 32 composed of onesurface portion of the shelf units U1, U2, and U3 disposed in the nearand far directions viewed from the cassette holding portion B1, onesurface portion of solution processing units U4 and U5 (that will bedescribed later) on the right, and a rear surface portion on the left.In the drawings, reference numerals 303 and 304 are temperature/humidityadjusting units having a temperature adjusting unit, atemperature/humidity adjusting duct, and so forth. The temperatureadjusting unit adjusts processing solutions used in each unit.

As shown in FIG. 31, the solution processing units U4 and U5 have astructure of which a plurality of units, for example five units, thatare a coating unit COT, a developing unit DEV into which the developingapparatus shown in FIG. 19 and FIG. 20 is incorporated, a reflectionprotection file forming unit BARC, and so forth are piled on anaccommodating portion 305 for a space for coating solution (resistsolution) and developing solution. On the other hand, the shelf unitsU1, U2, and U3 have a structure of which a plurality of units, forexample 10 units, that perform pre-processes and post-processes for thesolution processing units U4 and U5 are piled.

A far side of the shelf unit U3 of the processing portion B2 isconnected to an exposing portion B4 through an interface portion B3composed of a first conveying chamber 306 and a second conveying chamber307. The interface portion B3 has a shelf unit U6 and a buffer cassetteCO as well as two transferring means 308 and 309 that transfer a wafer Wbetween the processing portion B2 and the exposing portion B4.

Next, an example of a flow of a wafer in the apparatus will bedescribed. First of all, a cassette C that contains wafers W is conveyedfrom the outside of the apparatus and placed on the holding table 291.At that point, the open/close portion 292 and the lid of the cassette Care opened. A wafer W is taken from the cassette C by the transferringmeans 293. The wafer W is transferred to the main conveying means 301Athrough a transferring unit (not shown) as one shelf of the shelf unitUl. One shelf of the shelf units U1 to U3 performs for example ahydrophobic process and a cooling process as pre-processes of a coatingprocess. Thereafter, the coating unit COT coats resist solution onto thewafer W. After the resist film has been coated onto the front surface ofthe wafer W, it is heated by a heating unit as one shelf of the shelfunits U1 to U3. Thereafter, the wafer W is cooled. After the wafer W hasbeen cooled, it is loaded into the interface portion B3 through thetransferring unit of the shelf unit U3. In the interface portion B3, thewafer W is conveyed to the exposing portion B4 in a path of for examplethe transferring means 308->shelf unit U6->transferring means 309. Thewafer W is exposed in the exposing portion B4. After the wafer W hasbeen exposed, the wafer W is conveyed to the main conveying means 301Ain the reverse path. The developing unit DEV develops the wafer W. As aresult, a resist mask is formed on the wafer W. Thereafter, the wafer Wis returned to the original cassette C on the holding table 291.

It should be noted that the present invention can be applied to asworkpiece substrates, for example a LCD substrate and a photo maskreticule substrate, other than a semiconductor wafer.

Next, examples conducted to confirm the effect of the present inventionwill be described.

First Example

This example is a first example using the developing apparatus accordingto the second embodiment of the present invention.

In the first example, the developing process shown in FIG. 23 wasperformed for a substrate on which resist had been coated and for whichan exposing process had been performed. Separation distance L andwashing time period T of the washing solution supplying nozzle 205 werevaried as various set values. Surface defects were measured (using atest device made by KLA-tencor) for the front surface of the substrateon which the developing process had been performed so as to measure thenumber of development defects. In the verification, development defectsthat exceed 0.08 μm each were counted. Practical test conditions of thefirst example are as follows:

-   -   Substrate: 8-inch semiconductor wafer    -   Solution film thickness of developing solution D: 1.5 mm    -   Time period of stationary development: 60 seconds    -   Scanning speed of washing solution supplying nozzle 205: 120        mm/second    -   Flow amount of washing solution R: 2.0 litters/second    -   Separation distance L: 0.3 mm, 0.4 mm, (0.6 mm), (1.0 mm), 1.5        mm, 5 mm (values in parentheses were obtained under condition of        which washing time period was 5 seconds)    -   Number of times of scan-washing was performed (washing time        period): (for each value of separation distance L) 3 times (5        seconds), 6 times (10 seconds)

Result and Consideration of First Example

FIG. 32 shows the test result of the first example. First, the wafer Wwas washed for five seconds. When the value of the separation distance Lwas larger than 1.5 mm, the number of defects counted was 65000(detected upper limit value). When the value of the separation distanceL was 1.5 mm or less, the number of defects decreased. When the value ofthe separation distance L was 0.6 mm or less, the separation distance Lsharply decreased. When the values of the separation distance L were 0.3mm and 0.4 mm, the number of defects was around 20. Next, the washingtime period was set to 10 seconds. When the values of the separationdistance L were 0.3 mm and 0.4 mm, the number of defects was around 50.When the value of the separation distance L was 1.5 mm, the number ofdefects was around 50. Thus, the number of defects was not largelyvaried. However, when the value of the separation distance L was largerthan 1.5 mm, the number of defects increased. In other words, it wasconfirmed that when the tip of the discharging opening 250 of thewashing solution supplying nozzle 205 dips in the developing solution Dand the value of the separation distance L is 0.4 mm or less, the numberof defects can be decreased.

Second Example

This example is a second example of which the developing apparatusaccording to the third embodiment was used. In the second example, thedeveloping process shown in FIG. 23 was performed for the substrate onwhich the resist had been coated and for which the exposing process hadbeen performed. However, in the second example, the washing solution Rwas supplied using the washing solution supplying nozzle 205 shown inFIG. 25. Development defects were measured in the same manner as thefirst example. Practical test conditions of the second example are asfollows.

-   -   Substrate: 8-inch semiconductor wafer    -   Film thickness of developing solution D: 1.5 mm    -   Time period of stationary development: 60 seconds    -   Scanning speed of washing solution supplying nozzle 205: 120        mm/second    -   Flow amount of washing solution R: 2.0 litters/second    -   Separation distance L: 0.4 mm, 1.5 mm    -   Flow amount of air: 2.0 litters/second    -   Inclination angle θ: 60°    -   Number of times scan-washing is performed (washing time period):        9 times (15 seconds)        First Comparison

This example is a second comparison performed in the same conditions asthe second example except that gas was not supplied.

Results and Considerations of Second Example and First Comparison

FIG. 33 shows the results of the second example and the firstcomparison. As a result of the first comparison of which gas was notsupplied, the number of development defects was around 40. In contrast,the number of development defects of the second example of which gas wassupplied was suppressed to around 10. In other words, it was confirmedthat since gas is supplied, a flow of the developing solution D takesplace, the flow of the developing solution D sweeps away deposit, andthe washing solution R sweeps away the developing solution D, then thewashing effect is improved.

Fourth Embodiment

Next, with reference to FIG. 36 to FIG. 38, a fourth embodiment of thepresent invention will be described. FIG. 36 is a plan view showing adeveloping processing unit (DEV) having a plurality of rinsing nozzles.FIG. 37 is a side view schematically showing the front surface of awafer in the case that a plurality of rinsing nozzles are disposed. Forconvenience of description, the diameter of a wafer, the thickness ofdeveloping solution, the height of nozzles, and so forth shown in thedrawing are different from those that are practically used.

As shown in FIG. 36, a plurality of rinsing nozzles, for example fiverinsing nozzles 310 a to 310 e, are disposed in the moving directionthereof on the wafer W, namely in Y direction shown in FIG. 36. Therinsing nozzles 310 a to 310 e are held by a holding member 160 atintervals of t1. It is preferred that the value of t1 should be forexample in the range from 1 cm to 10 cm. Of course, the value of t1 maybe out of the range. The holding member 160 is held by a rinsing nozzlearm 136. The rinsing nozzle arm 136 is mounted on a motor 78. In thestructure, as the motor 78 moves on a guide rail 144, the rinsingnozzles 310 a to 310 e can be moved on the wafer W.

As shown in FIG. 37, the rinsing nozzles 310 a to 310 e are connected toa rinsing solution supplying portion 314 through a pipe 315. Rinsingsolution 316 stored in the rinsing solution supplying portion 314 is forexample pure water. A bellows pump 312 is mounted on the pipe 315.Pressure of the bellows pump 312 causes the rinsing solution 316 to flowfrom the rinsing solution supplying portion 314 into the pipe 315. Thebellows pump 312 causes the rinsing solution 316 that flows in the pipe315 to be discharged from the rinsing nozzles 310 a to 310 e. Valves 311a to 311 e are mounted on the pipe 315. The valves 311 a to 311 e adjustflow amounts of rinsing solution 316 that is discharged from the rinsingnozzles 310 a to 310 e.

Next, how the wafer W is rinsed using the rinsing nozzles 310 a to 310 ewill be described. The motor 78 and the bellows pump 312 are operated sothat while the rinsing nozzles 310 a to 310 e are discharging therinsing solution 316, they are moved on the wafer W. At that point,discharging openings 317 a to 317 e are contacted with the developingsolution 350 coated on the wafer W or the rinsing solution 316 on thewafer W so that the distance from the front surface of the wafer W tothe tips of the rinsing nozzles 310 a to 310 e is kept at t2. Thus, theimpact against the wafer W can be suppressed. As a result, the patterncollapse can be prevented. It is preferred that the value of t2 shouldbe for example 0.4 mm or less.

When the rinsing nozzles 310 a to 310 e are moved, their front portionscan push away the developing solution 350. Thus, the rinsing solution316 discharged on the wafer W spreads on the wafer W. When the rinsingsolution 316 spreads, a convection current may take place. Thedischarged rinsing solution 316 sinks nearly in the bottom of thedeveloping solution 350 and spreads therein. As a result, the rinsingsolution 316 causes impurities in the bottom of the developing solution350 to be washed away and removed. On the other hand, the developingsolution 350 pushes the rinsing solution 316. As a result, the rinsingsolution 316 rises to around the front surface of the developingsolution 350. The rinsing solution 316 that has risen flows on aroundthe front surface of the developing solution 350. As a result, therinsing solution 316 returns to around the discharging openings 317 a to317 e. This convection current causes the developing solution,impurities, and so forth to circulate on the wafer W. As a result, therinsing solution 316 cannot wash away the developing solution,impurities, and so forth. However, when the discharging openings 317 ato 317 e are contacted with the developing solution 350, the circulatedimpurities and so forth can be pushed away. As a result, the impuritiesand so forth can be removed from the substrate. Thus, the wafer W can beeffectively washed.

When the rinsing solution 316 is discharged, the flow amounts of therinsing nozzles 310 a to 310 e are gradually increased in the order fromthe forward rinsing nozzle 310 a to the backward rinsing nozzle 310 e inthe moving direction thereof. The flow amounts of the rinsing solution316 of the rinsing nozzles 310 a to 310 e are adjusted by the valves 311a to 311 e, respectively. The rinsing effect is proportional to the flowamount of the rinsing solution 316 discharged from the rinsing nozzles310 a to 310 e. On the other hand, the developing solution 350 isnormally alkaline solution whose pH value is around 12. Thus, when forexample neutral pure water as the rinsing solution 316 is suddenlydischarged to the alkaline developing solution 350, a pH shock takesplace. The pH shock is a phenomenon of which when two types of solutionswhose pH values are largely different are mixed, impurities take placeand adhere to a wafer W. Thus, when the flow amounts of the forwardrinsing nozzle 310 a to the backward rinsing nozzle 310 e are graduallyincreased in the order in the moving direction thereof, the developingsolution 350 can be gradually diluted. As a result, the pH values do notsuddenly vary. Thus, since the pH shock can be suppressed, the wafer Wcan be effectively rinsed.

Next, with reference to FIG. 38, an example of which alkaline solutionswhose pH values are different discharged from the rinsing nozzles 310 ato 310 e will be described.

FIG. 38 is a schematic diagram showing the front surface of a wafer inthe case that a plurality of rinsing nozzles are disposed. Forconvenience of description, the diameter of a wafer, the thickness ofdeveloping solution, the height of nozzles, and so forth shown in FIG.38 are different from those that are practically used. In FIG. 38,structural elements similar to those in the fourth embodiment aredenoted by similar reference numerals.

As shown in FIG. 38, the rinsing nozzles 310 a to 310 e are connected torinsing solution supplying portions 324 a to 324 e through pipes 315 ato 315 e, respectively. Alkaline solutions whose pH values aredifferent, for example diluted developing solutions as rinsing solutions326, are stored in the rinsing solution supplying portions 324 a to 324d. On the other hand, for example neutral pure water as rinsing solution326 is stored in the rinsing solution supplying portion 324 e. Alkalinesolution whose pH value is in the range from 9 to 10 is stored in therinsing solution supplying portion 324 a. Alkaline solution whose pHvalue is lower than the rinsing solution stored in the rinsing solutionstoring portion 324 a is stored in the rinsing solution supplyingportion 324 b. Likewise, alkaline solutions whose pH values aregradually decreased are stored in the rinsing solution supplyingportions 324 c and 324 d, respectively. Thus, the pH values of therinsing solutions 326 discharged from the rinsing nozzles 310 a to 310 eare gradually decreased so that the pH value of the rinsing solution 326discharged from the rinsing nozzle 310 a is the highest and the pH valueof the rinsing solution 326 discharged from the rinsing nozzle 310 e isthe lowest. Bellows pumps 312 a to 312 e are mounted on the pipes 315 ato 315 e, respectively. Pressures of the bellows pumps 312 a to 312 ecause the rinsing solutions 326 to flow from the rinsing solutionsupplying portions 324 a to 324 e into the pipes 315 a to 315 e,respectively. The bellows pumps 312 a to 312 e cause the rinsingsolutions 326 that have flowed in the pipes 315 a to 315 e to bedischarged from the rinsing nozzles 310 a to 310 e, respectively. Inaddition, valves 311 a to 311 e are mounted on the pipes 315 a to 315 e,respectively. The valves 311 a to 311 e can adjust the flow amounts ofthe rinsing solutions 326 discharged from the rinsing nozzles 310 a to310 e, respectively.

Next, how a wafer W is rinsed using the rinsing nozzles 310 a to 310 ewill be described. The motor 78 and the bellows pumps 312 a to 312 e areoperated. While the rinsing nozzles 310 a to 310 e are discharging therinsing solution 326, the rinsing nozzles 310 a to 310 e move on thewafer W. At that point, the discharging openings 317 a to 317 e arecontacted with the developing solution 350 coated on the wafer W or therinsing solution 326 on the wafer W. As a result, the impact against thewafer W can be suppressed. Thus, the pattern collapse can be prevented.In addition, as shown in FIG. 38, the front portion of the rinsingnozzle 310 a can push away the developing solution 350.

When the wafer W is rinsed in such a manner, the rinsing nozzles 310 ato 310 e can discharge rinsing solutions whose pH values different. Atthat point, the rinsing solution discharged from the forward rinsingnozzle 310 a in the moving direction of the rinsing nozzles 310 a to 310e is alkaline solution whose pH value is around 10. The pH values of therinsing solutions discharged from the rinsing nozzles 310 a to 310 e aregradually decreased in the order. The pH value of the rinsing solutiondischarged from the backward rinsing nozzle 310 e is the lowest. Thus,while impurities are prevented from depositing, the rinsing solution canbe gradually diluted. Finally, the wafer W can be washed with pure waterwithout the pH shock.

According to the present embodiment, likewise, the flow amounts ofrinsing solutions discharged from the rinsing nozzles 310 a to 310 e maybe gradually increased in the order. In addition, before the rinsingsolution is discharged, dispersant such as non-ionic surfactant may bemixed with the rinsing solution. For example, a surfactant tank thatstores non-ionic surfactant is disposed. The surfactant tank isconnected to a pipe. The rinsing solution and the non-ionic surfactantare mixed by a static mixer or the like. Thus, the surface tension ofthe rinsing solution can be suppressed. As a result, the patterncollapse can be more effectively prevented than the foregoingembodiments.

Fifth Embodiment

Next, with reference to FIG. 39 and FIG. 40, a fifth embodiment of thepresent invention will be described.

FIG. 39 is a schematic diagram showing a front surface of a wafer in thecase that a plurality of rinsing nozzles are disposed. Like theforegoing embodiments, for convenience of description, the diameter of awafer, the thickness of developing solution, the height of nozzles, andso forth are different from those that are practically used.

As shown in FIG. 39, a nozzle block 400 has a plurality of nozzles, forexample five nozzles, that are disposed at predetermined intervals inthe moving direction of the nozzle block 400. Among these nozzles, thenozzles 400 a, 400 c, and 400 e are rinsing nozzles that discharge forexample pure water, alkaline solution, or the like onto a wafer W. Onthe other hand, the nozzles 400 b and 400 d are sucking nozzles thatsuck impurities, residual developing solution, and residual rinsingsolution on the wafer W.

The nozzles 400 a to 400 e are disposed at constant intervals of t1 andheld by a holding member or the like (not shown). It is preferred thatt1 should be in the range from 1 cm to 10 cm. Of course, t1 may be outof the range. Discharging openings 417 a to 417 e of the nozzles 400 ato 400 e are held so that the distance from the front surface of thewafer W to each of the discharging openings 417 a to 417 e is kept att2. It is preferred that the value of t2 should be for example 0.4 mm orless. However, t2 may be any value as long as each of the nozzles 400 ato 400 e can contact the developing solution.

As shown in FIG. 39, the rinsing nozzles 400 a, 400 c, and 400 e areconnected to rinsing solution supplying portions 424 a, 424 c, and 424 ethrough pipes 415 a, 415 c, and 415 e, respectively. The rinsingsolution supplying portions 424 a, 424 c, and 424 e store pure water asrinsing solution 426. Bellows pumps 412 a, 412 c, and 412 e are mountedon the pipes 415 a, 415 c, and 415 e, respectively. Pressures of thebellows pumps 412 a, 412 c, and 412 e cause the rinsing solution 426 toflow from the rinsing solution supplying portions 424 a, 424 c, and 424e into the pipes 415 a, 415 c, and 415 e, respectively. The bellowspumps 412 a, 412 c, and 412 e cause the rinsing solution 426 that hasflowed in the pipes 415 a, 415 c, and 415 e to be discharged from therinsing nozzles 400 a, 400 c, and 400 e, respectively. Valves 411 a, 411c, and 411 e are mounted on the pipes 415 a, 415 c, and 415 e,respectively. The valves 411 a, 411 c, and 411 e can adjust the flowamounts of the rinsing solutions 426 discharged from the rinsing nozzles400 a, 400 c, and 400 e, respectively.

The sucking nozzles 400 b and 400 d have sucking openings 417 b and 417d, respectively. The sucking nozzles 417 b and 417 d are connected todrain reservoir portions 424 b and 424 d through pipes 415 b and 415 d,respectively. Bellows pumps 412 b and 412 d are mounted on the pipes 415b and 415 d, respectively. Pressures of the bellows pumps 412 b and 412d cause impurities, residual solution, and residual rinsing solution toflow to the drain reservoir portions 424 b and 424 d, respectively.

Next, how the wafer W is rinsed using the nozzles 400 a to 400 e will bedescribed. The bellows pumps 412 a, 412 c, and 412 e and a movingmechanism (not shown) are operated. While the rinsing nozzles 400 a, 400c, and 400 e are discharging the rinsing solution 426, they move on thewafer W. At that point, the discharging openings, the sucking openings,and the developing solution 360 coated on the wafer W are contacted.Thus, the impact against the wafer W can be suppressed. As a result, thepattern collapse can be prevented. In addition, since the rinsingnozzles 400 a, 400 c, and 400 e are moved, the front portion of thedeveloping solution 360 can push away the developing solution.

Since the bellows pumps 412 b and 412 d are operated while the rinsingnozzles 400 a to 400 e are being moved, the sucking nozzles 400 b and400 d can suck impurities, residual developing solution, and residualrinsing solution on the wafer W.

As described above, impurities and so forth may drift in rinsingsolution that is discharged from a rinsing nozzle and that resides onthe wafer W. After time elapses, the impurities will deposit and resideon the front surface of the wafer W. However, since the impurities aresucked along with the rinsing solution, the impurities can be preventedfrom residing on the front surface of the wafer W. Thus, the wafer W canbe effectively rinsed.

In addition, since rinsing nozzles and sucking nozzles are alternatelydisposed, developing solution, rinsing solution, impurities that depositon the front surface of the wafer W, and impurities that are dispersedby discharged rinsing solution can be immediately sucked. Moreover,since the rinsing solution is sucked, the wafer W can be easily dried.Furthermore, since the rinsing nozzles and sucking nozzles arealternately disposed, the distance between the rinsing nozzles can bekept. Thus, processes can be effectively performed.

In addition, as shown in FIG. 40, a rinsing nozzle block 450 and asucking nozzle block 451 may be disposed. The rinsing nozzle block 450has only rinsing nozzles 430, for example five rinsing nozzles 430,disposed in the moving direction of the rinsing nozzle block 450. Thesucking nozzle block 451 has only sucking nozzles, for example fivesucking nozzles 440, disposed in the moving direction of the suckingnozzle block 451. In this case, the rinsing nozzle block 450 and thesucking nozzle block 451 are placed at the forward and backwardpositions in the moving direction thereof, respectively.

First of all, while the rinsing nozzle block 450 is being moved, therinsing nozzle block 450 discharges the rinsing solution. At that point,discharging openings are contacted to the developing solution. Inreality, it is preferred that the distance between each of thedischarging openings and the front surface of the wafer W is 0.4 mm orless. Thus, the impact against the wafer W can be suppressed. As aresult, the pattern collapse can be effectively prevented.

Rinsing solution or developing solution that resides on the wafer W issucked by the sucking nozzle block 451. At that point, sucking openings441 are contacted to the developing solution or rinsing solution thatresides on the wafer W. Thus, impurities can be sucked. As a result, thewafer W can be easily dried. Consequently, processes can be effectivelyperformed.

Likewise, according to the present embodiment, the flow amounts ofrinsing solutions discharged from rinsing nozzles may be graduallyincreased in the moving direction thereof. Alternatively, the pH valuesof alkaline solutions discharged from the rinsing nozzles may begradually decreased in the moving direction thereof. In addition, toweaken the surface tension of rinsing solution, dispersant such asnon-ionic surfactant may be mixed therewith.

INDUSTRIAL APPLICABILITY

As described above, according to the present invention, developmentdefects can be decreased. In addition, developing solution can be washedin a short time.

Moreover, when processing solution such as developing solution is washedaway, rinsing solution can be equally supplied onto a substrate.

Furthermore, when processing solution contains for example dissolvablesubstance of resist or rinsing solution contains impurities, they can beprevented from adhering to a substrate.

1. A substrate processing apparatus, comprising: an elongated washingnozzle that includes a discharge opening and that discharges a washingsolution onto a front surface of a substrate on which a processingsolution has been coated; distance keeping means for keeping a distancebetween the discharge opening and the front surface of the substrateconstant so as to contact the discharge opening to the processingsolution when the washing solution is discharged from the washingnozzle; and moving means for moving at least one of the washing nozzleor the substrate relative to the other one of the washing nozzle or thesubstrate such that the washing nozzle pushes away the processingsolution and a discharge pressure of the washing solution sweeps out theprocessing solution.
 2. The substrate processing apparatus as set forthin claim 1, wherein the distance keeping means is configured to keep thedistance between the discharge opening and the front surface of thesubstrate at 0.4 mm or less.
 3. The substrate processing apparatus asset forth in claim 1, wherein the moving means includes parallel movingmeans for moving the washing nozzle substantially in parallel with thefront surface of the substrate and substantially perpendicular to theelongated washing nozzle while the washing nozzle is discharging thewashing solution.
 4. The substrate processing apparatus as set forth inclaim 3, wherein the washing nozzle includes a plurality of washingnozzle members, and wherein the plurality of washing nozzle members aredisposed at substantially constant intervals with respect to a directionin which the washing nozzle members are moved by the moving means. 5.The substrate processing apparatus as set forth in claim 4, furthercomprising: flow amount adjusting means for adjusting a flow amount of awashing solution discharged from respective ones of the plurality ofwashing nozzle members.
 6. The substrate processing apparatus as setforth in claim 5, wherein the respective flow amounts of the respectivewashing solutions discharged from respective ones of the plurality ofwashing nozzle members are gradually increased in order from a forwardwashing nozzle member to a rearward washing nozzle member with respectto the direction in which the plurality of washing nozzle members aremoved.
 7. The substrate processing apparatus as set forth in claim 5,wherein pH values of the respective washing solutions discharged fromrespective ones of the plurality of washing nozzle members are graduallydecreased in order from a forward washing nozzle member to a rearwardwashing nozzle member with respect to the direction in which theplurality of washing nozzle members are moved.
 8. The substrateprocessing apparatus as set forth in claim 1, wherein a length of thewashing nozzle is substantially the same as a diameter of the substrate.9. The substrate processing apparatus as set forth in claim 3, furthercomprising: a sucking nozzle for sucking the washing solution that hasbeen discharged by the washing nozzle and that resides on the substrate.10. The substrate processing apparatus as set forth in claim 9, whereinthe washing nozzle includes a plurality of washing nozzle members, andwherein the washing nozzle members and a plurality of sucking nozzlesare alternately disposed with respect to a direction in which theplurality of washing nozzle members and the plurality of sucking nozzlesare moved.
 11. The substrate processing apparatus as set forth in claim9, wherein the washing nozzle includes a plurality of washing nozzlemembers, wherein the plurality of washing nozzle members are disposedone in front of another with respect to a direction in which the washingnozzle members are moved, and wherein the sucking nozzle is preceded bythe washing nozzle members with respect to the direction in which thesucking nozzle and the plurality of washing nozzle members are moved.12. The substrate processing apparatus as set forth in claim 2, whereinthe washing solution contains non-ionic surfactant that weakens surfacetension of the washing solution.
 13. A developing apparatus thatdevelops a substrate on which resist has been coated and an exposingprocess has been performed, comprising: a substrate holding portion thathorizontally holds the substrate; a developing solution supplying nozzlethat supplies a developing solution onto the front surface of thesubstrate held by the substrate holding portion; a washing solutionsupplying nozzle that includes a discharge opening formed with a lengthequal to or larger than the width of an effective area of the substrateand that supplies a washing solution onto a front surface of thesubstrate on which the developing solution has been coated; and a movingmechanism that moves the washing solution supplying nozzle from a firstend side of the substrate to a second end side of the substrate in sucha manner that a lower end portion of the discharge opening is lower thana top surface of the developing solution and a separation distancebetween the lower end portion of the discharge opening and the frontsurface of the substrate is 0.4 mm or less such that the washingsolution supplying nozzle pushes away the developing solution and adischarge pressure of the washing solution sweeps out the developingsolution.
 14. A developing apparatus that develops a substrate on whichresist has been coated and an exposing process has been performed,comprising: a substrate holding portion that horizontally holds thesubstrate; a developing solution supplying nozzle that supplies adeveloping solution onto the front surface of the substrate held by thesubstrate holding portion; a washing solution supplying nozzle thatincludes a discharge opening formed with a length equal to or largerthan the width of an effective area of the substrate and that supplies awashing solution onto a front surface of the substrate on which thedeveloping solution has been coated; a gas blowing opening that isdisposed on a forward side portion of the washing solution supplyingnozzle with respect to a direction in which the washing solutionsupplying nozzle is moved and that is inclined with respect to the frontsurface of the substrate; and a moving mechanism that moves the washingsolution supplying nozzle from a first end side of the substrate to asecond end side of the substrate in such a manner that a lower endportion of the discharge opening is lower than a top surface of thedeveloping solution such that the washing solution supplying nozzlepushes away the developing solution and a discharge pressure of thewashing solution sweeps out the developing solution.
 15. The developingapparatus as set forth in claim 13 or 14, wherein the washing solutionsupplying nozzle includes a plurality of discharging openings disposedone in front of another with respect to the direction in which thewashing solution supplying nozzle is moved.
 16. The developing apparatusas set forth in claim 15, wherein a flow amount adjusting portion isdisposed at each of the discharging openings.
 17. The developingapparatus as set forth in claim 13, wherein after the substrate on whichthe developing solution has been coated is rotated for a predeterminedtime period, the washing solution is supplied.
 18. The developingapparatus as set forth in claim 13, wherein after the substrate iswashed by moving the washing solution supplying nozzle from the firstend side of the substrate to the second end side thereof while thewashing solution is discharged from the discharge opening thereof, thesubstrate is washed by rotating the substrate while the washing solutionis supplied to a center portion of the substrate.
 19. A substrateprocessing apparatus, comprising: means for supplying processingsolution onto a substrate; an elongated nozzle that discharges a rinsingsolution containing a first processing agent that weakens surfacetension of the rinsing solution onto the substrate; and moving means formoving at least one of the elongated nozzle or the substrate relative tothe other one of the elongated nozzle or substrate such that theelongated nozzle pushes away the processing solution and a dischargepressure of the rinsing solution sweeps out the processing solution. 20.The substrate processing apparatus as set forth in claim 19, wherein thefirst processing agent is non-ionic surfactant.
 21. The substrateprocessing apparatus as set forth in claim 19, wherein the rinsingsolution also contains a second processing agent that dispersesimpurities contained in the processing solution and the rinsingsolution.
 22. The substrate processing apparatus as set forth in claim21, wherein the second processing agent is negative-ionic surfactant.23. The substrate processing apparatus as set forth in claim 19, whereinthe moving means includes a mechanism that moves the nozzle at leasthorizontally on the substrate in a direction perpendicular to alongitudinal direction of the nozzle, wherein the rinsing solution isdischarged while the nozzle is moved by the moving mechanism.
 24. Thesubstrate processing apparatus as set forth in claim 23, wherein adischarging amount of the rinsing solution is in the range from 40 ml to500 ml per substrate.
 25. The substrate processing apparatus as setforth in claim 23, wherein the length of the nozzle is substantially thesame as the diameter of the substrate or larger than the diameter of thesubstrate.
 26. The substrate processing apparatus as set forth in claim23, wherein the nozzle is configured to discharge the rinsing solutionwhile the nozzle is in contact with the processing solution.
 27. Thesubstrate processing apparatus as set forth in claim 26, wherein thenozzle includes: a right-angle portion that is formed on a forward sideof the nozzle with respect to a direction in which the nozzle is movedand that upwardly extends from a lower end portion that is in contactwith the processing solution on the substrate; and a curved portion thatis formed on a rearward side of the nozzle with respect to the thedirection in which the nozzle is moved and that upwardly extends fromthe lower end portion.
 28. The substrate processing apparatus as setforth in claim 26, wherein the nozzle includes means for discharging therinsing solution at an angle with respect to a direction in which thenozzle is moved.
 29. The substrate processing apparatus as set forth inclaim 19, wherein the moving means includes a mechanism that rotates thenozzle on a plane in parallel with the front surface of the substrate,and wherein the rinsing solution is discharged while the nozzle isrotated by the rotating mechanism.
 30. The substrate processingapparatus as set forth in claim 29, wherein the length of the nozzle issubstantially the same as the diameter of the substrate.
 31. Thesubstrate processing apparatus as set forth in claim 30, wherein thenozzle is configured so that a first discharging direction of therinsing solution from a center portion of the nozzle to a first endportion of the nozzles and a second discharging direction of the rinsingsolution from the center portion of the nozzle to a second end portionof the nozzle form an angle with respect to a rotation direction inwhich the nozzle is rotated.
 32. The substrate processing apparatus asset forth in claim 30, wherein the nozzle includes means for dischargingthe rinsing solution so that a discharging angle between the rinsingsolution and the substrate is gradually increased with respect to adirection that extends from a center portion of the nozzle to an endportion thereof.
 33. The substrate processing apparatus as set forth inclaim 30, further comprising: means for discharging the rinsing solutionso that a discharging amount of the rinsing solution is graduallydecreased with respect to a direction that extends from the centerportion of the nozzle to an end portion thereof.
 34. A substrateprocessing apparatus, comprising: a rotatably holding portion thatrotatably holds a substrate; means for supplying processing solutiononto the substrate held by the rotatably holding portion; an elongatednozzle that discharges rinsing solution that contains a first processingagent that weakens surface tension of the rinsing solution onto thesubstrate on which processing solution has been supplied and that isbeing rotated by the rotatably holding portion; and moving means formoving at least one of the elongated nozzle or the substrate relative tothe other one of the elongated nozzle or the substrate such that theelongated nozzle pushes away the processing solution and a dischargepressure of the rinsing solution sweeps out the processing solution. 35.The substrate processing apparatus as set forth in claim 34, wherein thefirst processing agent is non-ionic surfactant.
 36. The substrateprocessing apparatus as set forth in claim 34, wherein the rinsingsolution also contains a second processing agent that dispersesimpurities that reside in the processing solution and the rinsingsolution.
 37. The substrate processing apparatus as set forth in claim36, wherein the second processing agent is negative-ionic surfactant.38. The substrate processing apparatus as set forth in claim 34, whereina discharging amount of the rinsing solution is in the range from 40 mlto 500 ml per substrate.
 39. The substrate processing apparatus as setforth in claim 34, wherein a length of the nozzle is substantially thesame as a diameter of the substrate or smaller than the diameter of thesubstrate.
 40. The substrate processing apparatus as set forth in claim34, wherein a number of rotations of the substrate is 500 rpm or less.41. The substrate processing apparatus as set forth in claim 40, whereina number of rotations of the substrate is 100 rpm or less.
 42. Thesubstrate processing apparatus as set forth in claim 34, wherein thenozzle is configured to discharge the rinsing solution while the nozzleis in contact with the processing solution.
 43. The substrate processingapparatus as set forth in claim 39, wherein the length of the nozzle issubstantially the same as the diameter of the substrate, and wherein afirst discharging direction of the rinsing solution from a centerportion of the nozzle to an end portion thereof and a second dischargingdirection of the rinsing solution from the center portion of the nozzleto a second end portion of the nozzle form an angle with respect to arotation direction in which the nozzle is rotated relative to thesubstrate.
 44. The substrate processing apparatus as set forth in claim39, wherein the nozzle includes means for discharging the rinsingsolution so that a discharging angle between the rinsing solution andthe substrate is gradually increased with respect to a direction thatextends from a center portion of the nozzle to the end portion thereof,and wherein the length of the nozzle is substantially the same as thediameter of the substrate.
 45. The substrate processing apparatus as setforth in claim 39, further comprising: means for discharging the rinsingsolution so that a discharging amount of the rinsing solution isgradually decreased with respect to a direction that extends from acenter portion of the substrate to the periphery portion thereof, andwherein the length of the nozzle is substantially the same as the radiusof the substrate.
 46. The substrate processing apparatus as set forth inclaim 39, further comprising: means for discharging the rinsing solutionso that a discharging amount of the rinsing solution is graduallydecreased with respect to a direction that extends from a center portionof the nozzle to the end portion thereof, and wherein the length of thenozzle is substantially the same as the diameter of the substrate.
 47. Asubstrate processing method, comprising the steps of: supplyingprocessing solution onto a substrate; moving an elongated nozzle havinga discharging opening relative to the substrate on which the processingsolution has been supplied such that the elongated nozzle pushes awaythe processing solution; and discharging a rinsing solution containing afirst processing agent that weakens surface tension of the rinsingsolution through the discharging opening while moving the elongatednozzle such that a discharge pressure of the rinsing solution sweeps outthe processing solution.
 48. A substrate processing method, comprisingthe steps of: supplying processing solution onto a substrate; rotatingthe substrate on which the processing solution has been supplied; anddischarging rinsing solution containing first processing agent thatweakens surface tension of the rinsing solution onto the substratethrough a discharging opening of an elongated nozzle such that theelongated nozzle pushes away the processing solution and a dischargepressure of the rinsing solution sweeps out the processing solution. 49.The developing apparatus as set forth in claim 14, wherein after thesubstrate on which the developing solution has been coated is rotatedfor a predetermined time period, the washing solution is supplied. 50.The developing apparatus as set forth in claim 14, wherein after thesubstrate is washed by moving the washing solution supplying nozzle fromthe first end side of the substrate to the second end side thereof whilethe washing solution is discharged from the discharge opening thereof,the substrate is washed by rotating the substrate while the washingsolution is supplied to a center portion of the substrate.